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Spin dynamics in semiconductors
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …
achieved much progress in the recent years due to the fast growing field of semiconductor …
Spin orientation of holes in quantum wells
R Winkler, D Culcer, SJ Papadakis… - Semiconductor …, 2008 - iopscience.iop.org
This paper reviews the spin orientation of spin-3/2 holes in quantum wells. We discuss the
Zeeman and Rashba spin splitting in hole systems that are qualitatively different from their …
Zeeman and Rashba spin splitting in hole systems that are qualitatively different from their …
Observation of long spin-relaxation times in bilayer graphene at room temperature
TY Yang, J Balakrishnan, F Volmer, A Avsar, M Jaiswal… - Physical review …, 2011 - APS
We report on the first systematic study of spin transport in bilayer graphene (BLG) as a
function of mobility, minimum conductivity, charge density, and temperature. The spin …
function of mobility, minimum conductivity, charge density, and temperature. The spin …
Evidence for Dyakonov-Perel-like spin relaxation in Pt
R Freeman, A Zholud, Z Dun, H Zhou, S Urazhdin - Physical review letters, 2018 - APS
We utilize nanoscale spin valves with Pt spacer layers to characterize spin relaxation in Pt.
Analysis of the spin lifetime indicates that Elliott-Yafet spin scattering is dominant at room …
Analysis of the spin lifetime indicates that Elliott-Yafet spin scattering is dominant at room …
Predicting phonon-induced spin decoherence from first principles: Colossal spin renormalization in condensed matter
J Park, JJ Zhou, Y Luo, M Bernardi - Physical Review Letters, 2022 - APS
Develo** a microscopic understanding of spin decoherence is essential to advancing
quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays …
quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays …
Coherent spin oscillations in bulk GaAs at room temperature
Time-resolved Kerr rotation in Voigt geometry is used to study the coherent evolution of spin
states in moderately doped n-Ga As crystals with picosecond excitation. Due to the small …
states in moderately doped n-Ga As crystals with picosecond excitation. Due to the small …
Band structure, -factor, and spin relaxation in -type InAsP alloys
SK Thapa, RRHH Mudiyanselage, T Paleologu, S Choi… - Physical Review B, 2023 - APS
We present experimental and theoretical studies of the magneto-optical properties of n-type
InAs x P 1− x films in ultrahigh magnetic fields at room temperature. We compare Landau …
InAs x P 1− x films in ultrahigh magnetic fields at room temperature. We compare Landau …
Temperature and do** dependence of spin relaxation in -InAs
BN Murdin, K Litvinenko, J Allam, CR Pidgeon… - Physical Review B …, 2005 - APS
We have used time-resolved spectroscopy to measure the relaxation of spin polarizations in
the narrow gap semiconductor material n-InAs as a function of temperature, do**, and …
the narrow gap semiconductor material n-InAs as a function of temperature, do**, and …
[HTML][HTML] Frequency response of spin drift-diffusion in n-doped Ge, Si, and GaAs
F Scali, M Finazzi, F Bottegoni… - Journal of Applied Physics, 2025 - pubs.aip.org
The frequency dependent drift-diffusive spin transport of polarized electrons lying at the
bottom of the conduction band of n-doped Ge, Si, and GaAs is numerically investigated at …
bottom of the conduction band of n-doped Ge, Si, and GaAs is numerically investigated at …
Anomalous magnetic field dependence of the spin lifetime in a lightly doped GaAs sample
JS Colton, ME Heeb, P Schroeder, A Stokes… - Physical Review B …, 2007 - APS
The T 1 spin lifetime of a lightly doped n-type GaAs sample has been measured via time-
resolved polarization spectroscopy under a number of temperature and magnetic field …
resolved polarization spectroscopy under a number of temperature and magnetic field …