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The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Tracking of point defects in the full compositional range of AlGaN via photoluminescence spectroscopy
A comprehensive energy map as a function of AlGaN composition over the whole alloy
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
Electron beam pumped light emitting devices
Electron beam pum** is a promising technique to fabricate compact and efficient light
emitters (lamps or lasers) in those spectral ranges where electrical injection is problematic …
emitters (lamps or lasers) in those spectral ranges where electrical injection is problematic …
[HTML][HTML] Growth of highly conductive Al-rich AlGaN: Si with low group-III vacancy concentration
The impact of AlGaN growth conditions on AlGaN: Si resistivity and surface morphology has
been investigated using metalorganic chemical vapor deposition. Growth parameters …
been investigated using metalorganic chemical vapor deposition. Growth parameters …
Ge doped GaN and Al0. 5Ga0. 5N-based tunnel junctions on top of visible and UV light emitting diodes
The use of tunnel junctions (TJs) is a potential solution in blue light-emitting diodes (LEDs)
to poor p-contacts, replacing it with another n-contact. TJs are even more advantageous for …
to poor p-contacts, replacing it with another n-contact. TJs are even more advantageous for …
Probing structural and chemical evolution in (AlxGa1− x) 2O3 using atom probe tomography: A review
Abstract (Al x Ga 1− x) 2 O 3 is a novel ultra‐wide bandgap semiconductor with the potential
to dominate future power electronics industries. High‐performance devices demand high Al …
to dominate future power electronics industries. High‐performance devices demand high Al …
Self-compensation in heavily Ge doped AlGaN: A comparison to Si do**
Self-compensation in Ge-and Si-doped Al 0.3 Ga 0.7 N has been investigated in terms of the
formation of III vacancy and donor-vacancy complexes. Both Ge-and Si-doped AlGaN layers …
formation of III vacancy and donor-vacancy complexes. Both Ge-and Si-doped AlGaN layers …
[HTML][HTML] Application of Smart Condensed H-Adsorption Nanocomposites in Batteries: Energy Storage Systems and DFT Computations
A comprehensive investigation of hydrogen grabbing towards the formation of hetero-
clusters of AlGaN–H, Si–AlGaN–H, Ge–AlGaN–H, Pd–AlGaN–H, and Pt–AlGaN–H was …
clusters of AlGaN–H, Si–AlGaN–H, Ge–AlGaN–H, Pd–AlGaN–H, and Pt–AlGaN–H was …
Direct observation of site-specific dopant substitution in Si doped (Al x Ga1− x) 2O3 via atom probe tomography
In this work, the interaction of n-type dopants in Si doped (Al x Ga 1− x) 2 O 3 films with
varying Al content over the entire composition range (x= 0%–100%) was analyzed using …
varying Al content over the entire composition range (x= 0%–100%) was analyzed using …
[HTML][HTML] The nature of the DX state in Ge-doped AlGaN
Electrical conductivity in high Al-content AlGaN has been severely limited, presumably due
to a DX transition forming an acceptor state and subsequent self-compensation, which …
to a DX transition forming an acceptor state and subsequent self-compensation, which …