Spintronics for energy-efficient computing: An overview and outlook
From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …
Spin-orbit torque switching of magnetic tunnel junctions for memory applications
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …
classes of materials and devices using electric currents, leading to novel spintronic memory …
Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques
The interplay of spin-transfer torque (STT) and spin-orbit torque (SOT) highlights the
potential of current-induced magnetization reversal for the ultrahigh-speed and ultralow …
potential of current-induced magnetization reversal for the ultrahigh-speed and ultralow …
NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration
The performance and efficiency of running large-scale datasets on traditional computing
systems exhibit critical bottlenecks due to the existing “power wall” and “memory wall” …
systems exhibit critical bottlenecks due to the existing “power wall” and “memory wall” …
[BOOK][B] Handbook of magnetic materials
EH Brück - 2017 - books.google.com
Handbook of Magnetic Materials, Volume 26, covers the expansion of magnetism over the
last few decades and its applications in research, notably the magnetism of several classes …
last few decades and its applications in research, notably the magnetism of several classes …
Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction
The current-induced spin-orbit torque (SOT) is one of the most promising ways for high
speed and low power spintronics devices. However, the mechanism of SOT driven …
speed and low power spintronics devices. However, the mechanism of SOT driven …
Spintronics intelligent devices
Intelligent computing paradigms have become increasingly important for the efficient
processing of massive amounts of data. However, using traditional electronic devices to …
processing of massive amounts of data. However, using traditional electronic devices to …
Energy efficient computing with high-density, field-free STT-assisted SOT-MRAM (SAS-MRAM)
Energy efficient computing hardware has played an instrumental role in enabling novel
abundant data applications and transformative new user experiences. As we look forward …
abundant data applications and transformative new user experiences. As we look forward …
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line
SAS-MRAM has been proposed as a potential last-level cache SRAM replacement owing to
its high speed (~ 1 ns), high cell density, and high endurance characteristics. Here, we …
its high speed (~ 1 ns), high cell density, and high endurance characteristics. Here, we …
Magnetic properties of Ni/BiFeO3 hybrid nanostructures
Next-generation spintronic applications, including magnetic nanosensors, energy-efficient
data storage devices and magnetic memory devices, have obtained scientific and …
data storage devices and magnetic memory devices, have obtained scientific and …