Spintronics for energy-efficient computing: An overview and outlook

Z Guo, J Yin, Y Bai, D Zhu, K Shi, G Wang… - Proceedings of the …, 2021 - ieeexplore.ieee.org
From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

V Krizakova, M Perumkunnil, S Couet… - Journal of Magnetism …, 2022 - Elsevier
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques

W Cai, K Shi, Y Zhuo, D Zhu, Y Huang… - IEEE Electron …, 2021 - ieeexplore.ieee.org
The interplay of spin-transfer torque (STT) and spin-orbit torque (SOT) highlights the
potential of current-induced magnetization reversal for the ultrahigh-speed and ultralow …

NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration

Y Zhao, J Yang, B Li, X Cheng, X Ye, X Wang… - Science China …, 2023 - Springer
The performance and efficiency of running large-scale datasets on traditional computing
systems exhibit critical bottlenecks due to the existing “power wall” and “memory wall” …

[BOOK][B] Handbook of magnetic materials

EH Brück - 2017 - books.google.com
Handbook of Magnetic Materials, Volume 26, covers the expansion of magnetism over the
last few decades and its applications in research, notably the magnetism of several classes …

Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction

Y Zhuo, W Cai, D Zhu, H Zhang, A Du, K Cao… - Science China Physics …, 2022 - Springer
The current-induced spin-orbit torque (SOT) is one of the most promising ways for high
speed and low power spintronics devices. However, the mechanism of SOT driven …

Spintronics intelligent devices

W Cai, Y Huang, X Zhang, S Wang, Y Pan, J Yin… - Science China Physics …, 2023 - Springer
Intelligent computing paradigms have become increasingly important for the efficient
processing of massive amounts of data. However, using traditional electronic devices to …

Energy efficient computing with high-density, field-free STT-assisted SOT-MRAM (SAS-MRAM)

W Hwang, F Xue, F Zhang, MY Song… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
Energy efficient computing hardware has played an instrumental role in enabling novel
abundant data applications and transformative new user experiences. As we look forward …

Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line

W Hwang, F Xue, MY Song, CF Hsu… - IEEE Electron …, 2024 - ieeexplore.ieee.org
SAS-MRAM has been proposed as a potential last-level cache SRAM replacement owing to
its high speed (~ 1 ns), high cell density, and high endurance characteristics. Here, we …

Magnetic properties of Ni/BiFeO3 hybrid nanostructures

U Khan, A Nairan, M Irfan, S Naz, D Wu… - Journal of Alloys and …, 2022 - Elsevier
Next-generation spintronic applications, including magnetic nanosensors, energy-efficient
data storage devices and magnetic memory devices, have obtained scientific and …