Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga… - Journal of Physics D …, 2018 - iopscience.iop.org
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs
We report enhancement-mode-Ga 2 O 3 (BGO) MOSFETs on a Si-doped homoepitaxial
channel grown by molecular beam epitaxy. A gate recess process is used to partially …
channel grown by molecular beam epitaxy. A gate recess process is used to partially …
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
The dynamic on-state resistance (RDSON) behavior of commercial GaN devices is very
important for a GaN-based converter. Since the zero-voltage switching techniques are …
important for a GaN-based converter. Since the zero-voltage switching techniques are …
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
The drain induced dynamic threshold voltage () shift of a-GaN gate HEMT with a Schottky
gate contact is investigated, and the underlying mechanisms are explained with a charge …
gate contact is investigated, and the underlying mechanisms are explained with a charge …
VTH Instability of -GaN Gate HEMTs Under Static and Dynamic Gate Stress
J He, G Tang, KJ Chen - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
The impacts of static and dynamic gate stress on the threshold voltage () instability in
Schottky-type-GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally …
Schottky-type-GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally …
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
S Yang, S Han, K Sheng… - IEEE Journal of Emerging …, 2019 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
Understanding the threshold voltage instability during OFF-state stress in p-GaN HEMTs
In this letter, we investigate by means of experimental results and TCAD simulations the
threshold voltage instability due to OFF-state drain stress in p-GaN gate AlGaN/GaN-on-Si …
threshold voltage instability due to OFF-state drain stress in p-GaN gate AlGaN/GaN-on-Si …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …