Developments in micro/nanoscale fabrication by focused ion beams
Focused ion beam (FIB) technology has become increasingly attractive for the fabrication of
micro/nano structures for the purpose of the demands in industry and research. In this paper …
micro/nano structures for the purpose of the demands in industry and research. In this paper …
Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …
Structure and properties of ion-beam-modified (6H) silicon carbide
The ion-beam-induced crystalline-to-amorphous phase transition in single crystal (6H) α-SiC
has been studied as a function of irradiation temperature. The evolution of the amorphous …
has been studied as a function of irradiation temperature. The evolution of the amorphous …
Ion-beam induced damage and annealing behaviour in SiC
E Wendler, A Heft, W Wesch - Nuclear Instruments and Methods in Physics …, 1998 - Elsevier
The paper presents the damage accumulation in silicon carbide (SiC) as a function of the
ion mass, the ion energy and the implantation temperature. A defect-interaction and …
ion mass, the ion energy and the implantation temperature. A defect-interaction and …
Recent advances in the do** of 4H-SiC by channeled ion implantation
The effect of lattice thermal vibrations on the channeling of 100 keV Al ions in 4H-SiC is
investigated. By implanting at room temperature in the direction, the depth distribution of the …
investigated. By implanting at room temperature in the direction, the depth distribution of the …
Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
A Debelle, L Thomé, D Dompoint… - Journal of Physics D …, 2010 - iopscience.iop.org
Abstract 6H-SiC and 3C-SiC single crystals were simultaneously irradiated at room
temperature with 100 keV Fe ions at fluences up to 4× 10 14 cm− 2 (∼ 0.7 dpa), ie up to …
temperature with 100 keV Fe ions at fluences up to 4× 10 14 cm− 2 (∼ 0.7 dpa), ie up to …
Swelling of SiC under helium implantation
S Leclerc, A Declémy, MF Beaufort, C Tromas… - Journal of applied …, 2005 - pubs.aip.org
Single crystals 4H-SiC were implanted with 50 keV helium ions at temperatures up to 600 C
and fluences in the range 1× 10 16–1× 10 17 cm− 2. The helium implantation-induced …
and fluences in the range 1× 10 16–1× 10 17 cm− 2. The helium implantation-induced …
Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties
X Kerbiriou, JM Costantini, M Sauzay… - Journal of Applied …, 2009 - pubs.aip.org
Structural, mechanical, and dimensional evolutions of silicon carbide (SiC) induced by
heavy-ion irradiations are studied by means of Rutherford backscattering spectrometry and …
heavy-ion irradiations are studied by means of Rutherford backscattering spectrometry and …
Limitations of focused ion beam nanomachining
C Lehrer, L Frey, S Petersen, H Ryssel - Journal of Vacuum Science & …, 2001 - pubs.aip.org
In this article, some limitations of the processing of structures with dimensions in the
nanometer range by focused ion beams will be discussed. In order to enable exact depth …
nanometer range by focused ion beams will be discussed. In order to enable exact depth …
Evolution of defects upon annealing in He-implanted 4H-SiC
S Leclerc, MF Beaufort, A Declémy… - Applied Physics Letters, 2008 - pubs.aip.org
The strain induced by room temperature helium implantation into 4 H-SiC below the
threshold amorphization dose results from both point and He-related defects. When the …
threshold amorphization dose results from both point and He-related defects. When the …