In this article, a label-free biosensor with a single cavity that uses a negative capacitance
heterojunction charge-plasma-based tunnel FET (NC-HJ-CP-TFET) is presented and …

This study aimed to investigate the influence of temperature on the reliability of an ultrathin-
body double-gate ferroelectric tunnel field-effect transistor (UTB-DG-FE-TFET). An in-depth …

In this article, a distinctive charge plasma (CP) technique is employed to design two do**-
less dual gate tunnel field effect transistors (DL-DG-TFETs) with Si 0.5 Ge 0.5 and Si as …

In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field
effect transistors (GAA-FET) is presented. The center potential is calculated for different …

The customary MOSFETs can be supplanted by Tunnel Field Effect Transistors (TFETs),
because of its capability of accomplishing sub-threshold swing (SS) under 60 mV/decade …

An analytical drain current model for double gate junctionless accumulation mode negative
capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the …

In this brief, a continuous Global Positioning System (GPS) tracker is designed with the help
of the ESP-8266 Node-MCU board. In this project, we can find the location of missing girls …

A comprehensive study on the behavior of gate-all-around (GAA) Tunnel Field Effect
Transistors (TFET) with different dielectrics in single dielectric-based structure as well as …

The combination of better transport properties of III-V group semiconductors along with
excellent electrostatic control of surrounding gate is a promising option for the future low …

A source pocket dual material hetero dielectric double gate (SPDMHDDG) TFET structure is
proposed in this work to improve tunneling current. An InGaAs material is used as a pocket …