Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …

This review presents a distillation of important results published during 2009 in major
journals and conference proceedings. Although the commercial promise of silicon photonics …

Monolithic integration of III-V compound semiconductors on silicon is highly sought after for
high-speed, low-power-consumption silicon photonics and low-cost, light-weight …

Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact
light source with unique advantages of ultralow energy consumption and small footprint for …

A method to integrate III–V compound semiconductor and SOI-CMOS on a common Si
substrate is demonstrated. The SOI-CMOS layer is temporarily bonded on a Si handle wafer …

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been
demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal …

Due to the indirect bandgap nature, the widely used silicon CMOS is very inefficient at light
emitting. The integration of silicon lasers is deemed as the'Mount Everest'for the full take-up …

The integration of III–V semiconductors (eg, GaAs and GaN) and silicon-on-insulator (SOI)-
CMOS on a 200 mm Si substrate is demonstrated. The SOI-CMOS donor wafer is …

(57) ABSTRACT A method of manufacturing a substrate is disclosed. The method
comprises: providing a first semiconductor sub strate, which includes an at least partially …

We demonstrate the continuous-wave operation of lambda-scale embedded active-region
photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The …