This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

We report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive
switching model for the device is proposed, taking into account important experimental and …

Aluminum scandium nitride (Al1–x Sc x N), with its large remanent polarization, is an
attractive material for high-density ferroelectric random-access memories. However, the …

Redox-based memristor devices, which are considered to have promising nonvolatile
memory, mainly operate through the formation/rupture of nanoscale conductive filaments …

We developed a physical model to fundamentally understand the conductive filament (CF)
formation and growth behavior in the switching layer during electroforming process in the …

The extreme device-to-device variation of switching performance is one of the major
obstacles preventing the applications of metal-oxide-based memristors in large-scale …

Redox-based resistive switching phenomena are found in many metal oxides and hold great
promise for applications in next-generation memories and neuromorphic computing …

In contrast to classical charge-based memories, the binary information in redox-based
resistive switching devices is decoded by a change of the atomic configuration rather than …

Atomic switches are considered to be building blocks for future non-volatile data storage and
internet of things. However, obtaining device structures capable of ultrahigh density data …

During the past decade, valence change memory (VCM) has been extensively studied due
to its promising features, such as a high endurance and fast switching times. The information …