Using comprehensive x-ray reciprocal space map**, we establish the precise lattice-
matching composition for wurtzite Sc x Al 1− x N layers on (0001) GaN to be x= 0.14±0.01 …

We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN
quantum wells. We find a trend of decreasing peak energy with increasing quantum well …

We use planar metamaterial resonators to enhance by more than two orders of magnitude
the near infrared second harmonic generation obtained from intersubband transitions in III …

We investigate electron transport in epitaxially grown nitride-based resonant tunneling
diodes (RTDs) and superlattice sequential tunneling devices. A density-matrix model is …

Al 1− x In x N, a III-nitride semiconductor material, is currently of great research interest due
to its remarkable physical properties and chemical stability. When the Al and In compositions …

We analysis the RF performance of novel Sc-Doped GaN high-electron-mobility transistors
(HEMTs) with asymmetric air-bridge structure by TCAD software. The maximum oscillating …

Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium
composition up to 21% and nearly strain-balanced In 0.09 Ga 0.91 N/Al 0.19 Ga 0.81 N …

In this paper, we report on the structural, optical, and electrical properties of a wide
compositional range of Al x In 1− x N thin layers deposited on glass and polyethylene …

Here we present a systematic study on crystallographic and topographical evolutions as well
as etching rates of crystallographic planes of cone-shaped patterned sapphire substrate …

Aluminum nitride (AlN)-based two-phase nanocomposite thin films with plasmonic Au and
Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such …