Semiconductor device including metal-2 dimensional material-semiconductor contact
LEE Minhyun, KIM Haeryong, S Hyeon**… - US Patent …, 2019 - Google Patents
(57) ABSTRACT A semiconductor device includes a semiconductor layer, a metal layer
electrically contacting the semiconductor layer, and a two-dimensional material layer …
electrically contacting the semiconductor layer, and a two-dimensional material layer …
Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methods
W Kula, GS Sandhu, JA Smythe - US Patent 11,121,258, 2021 - Google Patents
A transistor comprising a channel region on a material is disclosed. The channel region
comprises a two-dimensional material comprising opposing sidewalls and oriented …
comprises a two-dimensional material comprising opposing sidewalls and oriented …
Semiconductor device including metal-2 dimensional material-semiconductor contact
LEE Minhyun, KIM Haeryong, S Hyeon**… - US Patent …, 2020 - Google Patents
US10790356B2 - Semiconductor device including metal-2 dimensional material-semiconductor
contact - Google Patents US10790356B2 - Semiconductor device including metal-2 …
contact - Google Patents US10790356B2 - Semiconductor device including metal-2 …
Semiconductor device including metal-2 dimensional material-semiconductor contact
LEE Minhyun, KIM Haeryong, S Hyeon**… - US Patent …, 2024 - Google Patents
US12040360B2 - Semiconductor device including metal-2 dimensional material-semiconductor
contact - Google Patents US12040360B2 - Semiconductor device including metal-2 …
contact - Google Patents US12040360B2 - Semiconductor device including metal-2 …
Semiconductor device including metal-2 dimensional material-semiconductor contact
LEE Minhyun, KIM Haeryong, S Hyeon**… - US Patent …, 2020 - Google Patents
US10559660B2 - Semiconductor device including metal-2 dimensional material-semiconductor
contact - Google Patents US10559660B2 - Semiconductor device including metal-2 …
contact - Google Patents US10559660B2 - Semiconductor device including metal-2 …
Ballistic field-effect transistors based on Bloch resonance and methods of operating a transistor
V Pogrebnyak, J Bird - US Patent 11,133,409, 2021 - Google Patents
A semiconductor device includes a source, a drain, and a channel electrically connected to
the source and the drain. The channel has a channel length from the drain to the source …
the source and the drain. The channel has a channel length from the drain to the source …
Transistors including two-dimensional materials
HOIL 29/08(2006.01) HOIL 29/24(2006.01) HOIL 29/78(2006.01) HOIL 29/66(2006.01)(52)
US CI. CPC HOIL 29/0847 (2013.01); HOIL 29/24 (2013.01); HOIL 23/498 (2013.01); HOIL …
US CI. CPC HOIL 29/0847 (2013.01); HOIL 29/24 (2013.01); HOIL 23/498 (2013.01); HOIL …
Transistors comprising two-dimensional materials and related memory cells and electronic devices
W Kula, GS Sandhu, JA Smythe - US Patent 12,015,089, 2024 - Google Patents
A transistor comprising a channel region on a material is disclosed. The channel region
comprises a two-dimensional material comprising opposing sidewalls and oriented …
comprises a two-dimensional material comprising opposing sidewalls and oriented …
Vertical transistor device with source/drain regions comprising a twi-dimensional (2D) material and methods of making such vertical transistor devices
H Yang, D Pritchard, K Sun, H Ren, N Nayyar… - US Patent …, 2021 - Google Patents
One illustrative device disclosed herein includes a bottom source/drain region and a top
source/drain region positioned vertically above at least a portion of the bottom source/drain …
source/drain region positioned vertically above at least a portion of the bottom source/drain …
Vertical transistor device comprising a two-dimensional (2D) material positioned in a channel region of the device and methods of making such vertical transistor …
H Yang, D Pritchard, K Sun, H Ren, N Nayyar… - US Patent …, 2021 - Google Patents
One illustrative vertical transistor device disclosed herein includes a channel region
comprising at least one layer of a two-dimensional (2D) material, a bottom source/drain …
comprising at least one layer of a two-dimensional (2D) material, a bottom source/drain …