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Comparison of ultraviolet photo-field effects between hydrogenated amorphous silicon and amorphous InGaZnO4 thin-film transistors
K Takechi, M Nakata, T Eguchi… - Japanese Journal of …, 2009 - iopscience.iop.org
We discuss the ultraviolet (UV) photo-field effects in amorphous InGaZnO 4 thin-film
transistors (a-IGZO TFTs) compared with those in hydrogenated amorphous silicon (a-Si: H) …
transistors (a-IGZO TFTs) compared with those in hydrogenated amorphous silicon (a-Si: H) …
Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector
We report a ZnO-based thin film transistor UV photodetector with a back gate configuration.
The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of …
The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of …
High-performance light-erasable memory and real-time ultraviolet detector based on unannealed indium–gallium–zinc–oxide thin-film transistor
A light-erasable memory and a real-time ultraviolet (UV) detector were developed from an
amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistor fabricated at room …
amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistor fabricated at room …
Ti∕ Au n-type Ohmic contacts to bulk ZnO substrates
Electron-beam-deposited Ti∕ Au ohmic contacts on undoped (n∼ 10 17 cm− 3) bulk ZnO
substrates exhibited as-deposited specific contact resistivity of 3× 10− 4 Ω cm 2, regardless …
substrates exhibited as-deposited specific contact resistivity of 3× 10− 4 Ω cm 2, regardless …
Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface
The temporal development of next-generation photo-induced transistor across
semiconductor quantum dots and Zn-related oxide thin film is reported in this paper …
semiconductor quantum dots and Zn-related oxide thin film is reported in this paper …
IGZO thin-film light-addressable potentiometric sensor
CM Yang, CH Chen, LB Chang… - IEEE Electron Device …, 2016 - ieeexplore.ieee.org
An In-Ga-Zn oxide (IGZO) layer is applied, for the first time, as the semiconductor layer of a
light-addressable potentiometric sensor (LAPS). The IGZO layer sputtered on the …
light-addressable potentiometric sensor (LAPS). The IGZO layer sputtered on the …
The effects of ultraviolet exposure on the device characteristics of atomic layer deposited-ZnO: N thin film transistors
We investigated the effects of ultraviolet (UV) light illumination on nitrogen-doped atomic
layer deposited (ALD)-ZnO: N thin film transistors (TFTs). ALD ZnO: N thin films grown at 125 …
layer deposited (ALD)-ZnO: N thin film transistors (TFTs). ALD ZnO: N thin films grown at 125 …
Nonlinear photocurrent-intensity behavior of amorphous InZnO thin film transistors
The photocurrent (I PH) of amorphous InZnO thin film transistors in the off-state is
investigated as a function of incident optical power (P). The results show that I PH exhibits a …
investigated as a function of incident optical power (P). The results show that I PH exhibits a …
Improving resistance to gate bias stress in pentacene TFTs with optimally cured polymer dielectric layers
We report on the insulator charging effects of poly-4-vinylphenol (PVP) gate dielectric on the
reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin …
reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin …
Study on current crowding in the output characteristics of amorphous InGaZnO4 thin-film transistors using dual-gate structures with various active-layer thicknesses
K Takechi, M Nakata, T Eguchi… - Japanese Journal of …, 2009 - iopscience.iop.org
We investigate current crowding in the output characteristics of amorphous InGaZnO 4 thin-
film transistors (a-IGZO TFTs) using dual-gate structures with various active-layer …
film transistors (a-IGZO TFTs) using dual-gate structures with various active-layer …