The discovery of the spin-torque effect has made magnetic nanodevices realistic candidates
for active elements of memory devices and applications. Magnetoresistive effects allow the …

This article reviews static and dynamic interfacial effects in magnetism, focusing on
interfacially driven magnetic effects and phenomena associated with spin-orbit coupling and …

Field-programmable gate arrays (FPGAs) based on static random access memory (SRAM)
are more common than other types, including flash and anti-fuse, because of their infinite …

Spin-transfer torque random access memory (STT-RAM) is an emerging storage technology
that is considered widely thanks to its attractive features such as low power consumption …

Emerging non-volatile memories (eg STT-MRAM, OxRRAM and CBRAM) based on resistive
switching are under intense research and development investigation by both academics and …

With the recent trend of promoting Field-Programmable Gate Arrays (FPGAs) to first-class
citizens in accelerating compute-intensive applications in networking, cloud services and …

In this work, a novel memristive SRAM cell is designed using seven transistors and one
memristor (7T1M). In this 7T1M SRAM cell, the non-volatile functionality is achieved by …

Configurable Logic Block (CLB) is the basic computational component of FPGA. The existing
methods of creating CLB suffer from temperature sensitivity, higher static and switching …

Configurable logic block (CLB) is the fundamental unit of Field Programmable Gate Array
(FPGA) technology. This paper aims to design a CLB using pass transistor logic (PTL). The …

Abstract The Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)
has opened new doors as an emerging technology with high potential to replace traditional …