Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
S Chichibu, T Azuhata, T Sota, S Nakamura - Applied Physics Letters, 1996 - pubs.aip.org
Emission mechanisms of InGaN single quantum well blue and green light emitting diodes
and multiquantum well structures were investigated by means of modulation spectroscopy …
and multiquantum well structures were investigated by means of modulation spectroscopy …
Physical and electrochemical properties of 1-alkyl-3-methylimidazolium tetrafluoroborate for electrolyte
T Nishida, Y Tashiro, M Yamamoto - Journal of Fluorine Chemistry, 2003 - Elsevier
Three kinds of ionic liquids, 1-alkyl-3-methylimidazolium tetrafluoroborate (n= 2–4), were
prepared and fundamental properties of ionic liquids and those mixed with industrially used …
prepared and fundamental properties of ionic liquids and those mixed with industrially used …
A spatial light modulator for terahertz beams
We design and implement a multipixel spatial modulator for terahertz beams using active
terahertz metamaterials. Our first-generation device consists of a 4× 4 pixel array, where …
terahertz metamaterials. Our first-generation device consists of a 4× 4 pixel array, where …
Observation of stimulated Raman amplification in silicon waveguides
We report the first observation of Stimulated Raman Scattering (SRS) in silicon waveguides.
Amplification of the Stokes signal, at 1542.3 nm, of up to 0.25 dB has been observed in …
Amplification of the Stokes signal, at 1542.3 nm, of up to 0.25 dB has been observed in …
Bulk texture evolution of Cu–Nb nanolamellar composites during accumulative roll bonding
A combination of accumulative roll bonding (ARB) and rolling is used to fabricate
nanolamellar Cu–Nb multilayers with individual layer thicknesses (h) of 600μm⩾ h⩾ 10nm …
nanolamellar Cu–Nb multilayers with individual layer thicknesses (h) of 600μm⩾ h⩾ 10nm …
Defect‐related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2
KS Min, KV Shcheglov, CM Yang, HA Atwater… - Applied Physics …, 1996 - pubs.aip.org
Two sources of room temperature visible luminescence are identified from SiO2 films
containing ion beam synthesized Si nanocrystals. From a comparison of luminescence …
containing ion beam synthesized Si nanocrystals. From a comparison of luminescence …
Crystal growth and characterization of the organic salt 4‐N, N‐dimethylamino‐4′‐N‐methyl‐stilbazolium tosylate (dast)
The growth of bulk crystals of organic salts with large chromophoric has received little
attention, despite the importance of crystal quality for both applications and research. Here …
attention, despite the importance of crystal quality for both applications and research. Here …
[HTML][HTML] Monolithic on-chip mid-IR methane gas sensor with waveguide-integrated detector
We demonstrate a monolithic waveguide sensor integrated with a detector on-chip for mid-
infrared absorption spectroscopic sensing. The optical sensing element comprises a …
infrared absorption spectroscopic sensing. The optical sensing element comprises a …
Mechanism of yellow luminescence in GaN
We investigated the pressure behavior of yellow luminescence in bulk crystals and epitaxial
layers of GaN. This photoluminescence band exhibits a blueshift of 302 meV/GPa for …
layers of GaN. This photoluminescence band exhibits a blueshift of 302 meV/GPa for …
Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films
W Rieger, T Metzger, H Angerer, R Dimitrov… - Applied physics …, 1996 - pubs.aip.org
The influence of biaxial stress on the optical properties of thin GaN films is studied by x‐ray
diffraction and Raman and photoluminescence spectroscopy. The stress is caused by …
diffraction and Raman and photoluminescence spectroscopy. The stress is caused by …