Thermoelectricity in correlated narrow-gap semiconductors
JM Tomczak - Journal of Physics: Condensed Matter, 2018 - iopscience.iop.org
We review many-body effects, their microscopic origin, as well as their impact on
thermoelectricity in correlated narrow-gap semiconductors. Members of this class—such as …
thermoelectricity in correlated narrow-gap semiconductors. Members of this class—such as …
Angle-resolved photoemission study of the strongly correlated semiconductor FeSi
The temperature-dependent electronic states of FeSi have been studied by using high-
resolution angle-resolved photoemission spectroscopy (ARPES) and using low-energy …
resolution angle-resolved photoemission spectroscopy (ARPES) and using low-energy …
Magnetoconduction in the Correlated Semiconductor FeSi in Ultrastrong Magnetic Fields up to a Semiconductor-to-Metal Transition
Magnetoresistance of the correlated narrow-gap semiconductor FeSi was investigated by
the radio frequency self-resonant spiral coil technique in magnetic fields up to 500 T, which …
the radio frequency self-resonant spiral coil technique in magnetic fields up to 500 T, which …
Scrutinizing Hall Effect in : Fermi Surface Evolution and Hidden Quantum Criticality
Separating between the ordinary Hall effect and anomalous Hall effect in the paramagnetic
phase of Mn 1-x Fe x Si reveals an ordinary Hall effect sign inversion associated with the …
phase of Mn 1-x Fe x Si reveals an ordinary Hall effect sign inversion associated with the …
Electron-phonon interaction and spectral weight transfer in
D Menzel, P Popovich, NN Kovaleva, J Schoenes… - Physical Review B …, 2009 - APS
A comprehensive ellipsometric study was performed on Fe 1− x Co x Si single crystals in the
spectral range from 0.01 to 6.2 eV. Direct and indirect band gaps of 73 and 10 meV …
spectral range from 0.01 to 6.2 eV. Direct and indirect band gaps of 73 and 10 meV …
[HTML][HTML] Hop** conduction in FeSi. I. The Hall, Seebeck, and Nernst effects due to hop** conduction in the top and bottom impurity Hubbard bands
Y Kajikawa - AIP Advances, 2021 - pubs.aip.org
FeSi is known as a narrow-gap semiconductor showing peculiar temperature dependence
of transport properties, which evoked debate for over 50 years. In this study, it is shown that …
of transport properties, which evoked debate for over 50 years. In this study, it is shown that …
Crossover in magnetic properties of FeSi
NE Sluchanko, VV Glushkov, SV Demishev… - Physical Review B, 2002 - APS
The magnetization of high quality iron monosilicide single crystals has been studied in a
wide temperature and magnetic-field range. These data are analyzed by taking into account …
wide temperature and magnetic-field range. These data are analyzed by taking into account …
Entropy, frustration, and large thermopower of doped Mott insulators on the fcc lattice
LF Arsenault, BS Shastry, P Sémon… - Physical Review B …, 2013 - APS
Electronic frustration and strong correlations may lead to large Seebeck coefficients. To
understand this physics on general grounds, we compute the thermopower of the one-band …
understand this physics on general grounds, we compute the thermopower of the one-band …
Correlated excited states in the narrow band gap semiconductor FeSi and antiferromagnetic screening of local spin moments
The physical properties of the semiconductor FeSi with very narrow band gap, anomalous
behavior of the magnetic susceptibility and metal-insulator transition at elevated …
behavior of the magnetic susceptibility and metal-insulator transition at elevated …
Resonant charge relaxation as a likely source of the enhanced thermopower in FeSi
P Sun, B Wei, D Menzel, F Steglich - Physical Review B, 2014 - APS
The enhanced thermopower of the correlated semiconductor FeSi is found to be robust
against the sign of the relevant charge carriers. At T≈ 70 K, the position of both the high …
against the sign of the relevant charge carriers. At T≈ 70 K, the position of both the high …