Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications
W Jeon - Journal of Materials Research, 2020 - cambridge.org
Capacitors represent the largest obstacle to dynamic random-access memory (DRAM)
technology evolution because the capacitor properties govern the overall operational …
technology evolution because the capacitor properties govern the overall operational …
[PDF][PDF] Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies
DOI: 10.1002/adma. 201602976 usually called oxide-based RRAM (OxRRAM) or valence
change memory (VCM).[19, 22–25, 29] Up to now, several fundamental issues of the elusive …
change memory (VCM).[19, 22–25, 29] Up to now, several fundamental issues of the elusive …
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
Hafnium oxide (HfOx)‐based memristive devices have tremendous potential as nonvolatile
resistive random access memory (RRAM) and in neuromorphic electronics. Despite its …
resistive random access memory (RRAM) and in neuromorphic electronics. Despite its …
[PDF][PDF] Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron …
Since the first report of ferroelectricity in hafnium oxide (HfO2) doped with SiO2 in 2011 [1],
significant research efforts have been directed toward understanding the switchable …
significant research efforts have been directed toward understanding the switchable …
Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
Investigations concerning oxygen deficiency will increase our understanding of those factors
that govern the overall material properties. Various studies have examined the relationship …
that govern the overall material properties. Various studies have examined the relationship …
Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0. 5Zr0. 5O2 ferroelectric thin films
Y Zheng, Y Zhang, T ** in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the
evolutions of their crystallographic phases, grain sizes, and electric properties, such as their …
evolutions of their crystallographic phases, grain sizes, and electric properties, such as their …
Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures
P Calka, E Martinez, V Delaye, D Lafond… - …, 2013 - iopscience.iop.org
Structural, chemical and electronic properties of electroforming in the TiN/HfO 2 system are
investigated at the nanometre scale. Reversible resistive switching is achieved by biasing …
investigated at the nanometre scale. Reversible resistive switching is achieved by biasing …
Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement
The authors demonstrate improved switching voltage, retention, and endurance properties
in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen …
in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen …
Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy
The charge-trap** process, with HfO 2 film as the charge-capturing layer, has been
investigated by using in situ electron energy-loss spectroscopy and in situ energy-filter …
investigated by using in situ electron energy-loss spectroscopy and in situ energy-filter …