Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes
We investigated the current–voltage characteristics and responsivity of photodiodes
fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a …
fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a …
Feasibility of room-temperature GHz-THz direct detection in graphene through hot-carrier effect
M Amirmazlaghani, F Raissi - IEEE Transactions on Device …, 2018 - ieeexplore.ieee.org
Recent theories suggest that the photo thermoelectric effect dominates the photo response
in graphene. Hot-carrier generation arising from carrier multiplication in graphene under the …
in graphene. Hot-carrier generation arising from carrier multiplication in graphene under the …
84 dB DC‐gain two‐stage class‐AB OTA
Operational trans‐conductance amplifiers (OTAs) are an essential building block in
analogue and mixed‐signal circuits. In this study, a new two‐stage class‐AB OTA is …
analogue and mixed‐signal circuits. In this study, a new two‐stage class‐AB OTA is …
Dual band photodetector
AGU Perera, SG Matsik - US Patent 7,838,869, 2010 - Google Patents
H101 H 8, 1986 Walker.................... 250/338.1 violet optical signals is disclosed. Aspects
include homojunc 5,063,419 A 1 1/1991 Glaser et al. tion and heterojunction detectors …
include homojunc 5,063,419 A 1 1/1991 Glaser et al. tion and heterojunction detectors …
Characteristic measurement for femtosecond laser pulses using a GaAs PIN photodiode as a two-photon photovoltaic receiver
J Chen, W **a, M Wang - Journal of Applied Physics, 2017 - pubs.aip.org
Photodiodes that exhibit a two-photon absorption effect within the spectral communication
band region can be useful for building an ultra-compact autocorrelator for the characteristic …
band region can be useful for building an ultra-compact autocorrelator for the characteristic …
Pore size dependence of PtSi/Porous Si Schottky barrier detectors on quantum efficiency response
H Mehrara, A Erfanian, M Khaje, M Zahedinejad… - Sensors and Actuators A …, 2012 - Elsevier
The paper describes how pore size and geometry of porous silicon can affect the electrical
and optical properties of PtSi/Porous Si Schottky barrier detectors. In this study, two …
and optical properties of PtSi/Porous Si Schottky barrier detectors. In this study, two …
Single-electron effect in PtSi/porous Si Schottky junctions
F Raissi, MS Abrishamian… - IEEE Transactions on …, 2004 - ieeexplore.ieee.org
PtSi/porous Si schottky junctions exhibit a breakdown type current-voltage (IV) curve in
reverse bias mode. Below breakdown their current density is much less than regular PtSi/Si …
reverse bias mode. Below breakdown their current density is much less than regular PtSi/Si …
Complementary metal–oxide–semiconductor compatible 1060 nm photodetector with ultrahigh gain under low bias
Falling on the tail of the absorption spectrum of silicon, 1060 nm Si detectors often suffer
from low responsivity unless an exceedingly thick absorption layer is used, a design that …
from low responsivity unless an exceedingly thick absorption layer is used, a design that …
Characteristics of a Si dual-band detector responding in both near-and very-long-wavelength-infrared regions
G Ariyawansa, MBM Rinzan, SG Matsik… - Applied physics …, 2006 - pubs.aip.org
A p-type Si homojunction detector responding in both near-and very-long-wavelength-
infrared (NIR and VLWIR) ranges is demonstrated. The detector consists of a p++-Si top …
infrared (NIR and VLWIR) ranges is demonstrated. The detector consists of a p++-Si top …
Dual band photodetector
AGU Perera, SG Matsik - US Patent 8,093,582, 2012 - Google Patents
(57) ABSTRACT A dual band photodetector for detecting infrared and ultra violet optical
signals is disclosed. Aspects include homojunc tion and heterojunction detectors comprised …
signals is disclosed. Aspects include homojunc tion and heterojunction detectors comprised …