Dislocation networks formed by silicon wafer direct bonding
M Reiche - Materials Science Forum, 2008 - Trans Tech Publ
The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are
obtained by removing the oxide layer from the surfaces of crystalline silicon substrates …
obtained by removing the oxide layer from the surfaces of crystalline silicon substrates …
Dislocation-based Si-nanodevices
M Reiche, M Kittler, D Buca, A Hähnel… - Japanese Journal of …, 2010 - iopscience.iop.org
The realization of defined dislocation networks by hydrophobic wafer bonding allows the
electrical characterization of individual dislocations. The present paper investigates the …
electrical characterization of individual dislocations. The present paper investigates the …
Structure and properties of dislocations in silicon
M Reiche, M Kittler - Crystalline Silicon—Properties and Uses, In …, 2011 - books.google.com
Defects in crystalline materials modify locally the periodic order in a crystal structure. They
characterize the real structure and modify numerous physical and mechanical properties of …
characterize the real structure and modify numerous physical and mechanical properties of …
Molecular dynamics studies of the dissociated screw dislocation in silicon
Characterizing the motion of dislocations through covalent, high Peierls barrier materials is a
key problem in materials science, while despite the progress in experimental studies the …
key problem in materials science, while despite the progress in experimental studies the …
Characterization of dislocation-based nanotransistors
M Reiche, M Kittler - 16th International Workshop on Physics …, 2012 - spiedigitallibrary.org
Dislocations are native nanowires. The realization of well-defined dislocation networks
allows the electrical characterization of only a small number of dislocations. Different types …
allows the electrical characterization of only a small number of dislocations. Different types …
[PDF][PDF] Wechselwirkungen zwischen Versetzungen und Punktdefekten in Halbleitern
HS Leipner - 2001 - opendata.uni-halle.de
Gitterbaufehler sind in Halbleitermaterialien aufgrund ihres entscheidenden Einflusses auf
die Eigenschaften und die Funktion von Bauelementen von permanentem Interesse …
die Eigenschaften und die Funktion von Bauelementen von permanentem Interesse …
[PDF][PDF] ATOMIC LEVEL MODELING OF EXTENDED DEFECTS IN CRYSTALLINE MATERIALS AND RECENT DEVELOPMENTS OF DESCRIPTION OF ATOMIC …
V VITEK - msmf.fme.vutbr.cz
Physical and mechanical properties of materials are to a great extent controlled by extended
crystal defects: dislocations, interfaces and external surfaces. Very frequently it is the atomic …
crystal defects: dislocations, interfaces and external surfaces. Very frequently it is the atomic …
Measurement methods, part H
Collaboration: Authors and Editors of the … - … IV Elements, IV-IV and III …, 2002 - Springer
Measurement methods, part H, pp. 15 Page 1 York: Academic Press 1962, p. 223. 83P Poole,
CP: "Electron Spin Resonance", 2nd Edition, New York: John Wiley&Sons 1983. 3.4 Analysis …
CP: "Electron Spin Resonance", 2nd Edition, New York: John Wiley&Sons 1983. 3.4 Analysis …
Multiscale ab initio approaches to materials physics
TD Engeness - 2003 - dspace.mit.edu
This work presents new ab initio approaches to materials physics. We first introduce the
multiscale approach to determination of thermal properties and changes in free energy. With …
multiscale approach to determination of thermal properties and changes in free energy. With …
Silicon, paramagnetic centers: principal values of g-tensors of orthorhombic-I centers
Collaboration: Authors and Editors of the … - … IV Elements, IV-IV and III …, 2002 - Springer
This document is part of Subvolume A2a 'Impurities and Defects in Group IV Elements, IV-IV
and III-V Compounds. Part a: Group IV Elements' of Volume 41 'Semiconductors' of Landolt …
and III-V Compounds. Part a: Group IV Elements' of Volume 41 'Semiconductors' of Landolt …