[HTML][HTML] β-Gallium oxide power electronics
Improved electrical performance for SiO2/β-Ga2O3 (001) MIS capacitor by post-deposition annealing
Q Zhang, D Zhai, M He, J Lu - Materials Science in Semiconductor …, 2024 - Elsevier
In this study, we have fabricated a high-performance SiO 2/β-Ga 2 O 3 (001) MIS capacitor
and investigated the effect of low-temperature post-deposition annealing (PDA) on its …
and investigated the effect of low-temperature post-deposition annealing (PDA) on its …
Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications
O Maimon, Q Li - Materials, 2023 - mdpi.com
Power electronics are becoming increasingly more important, as electrical energy
constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly …
constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly …
[HTML][HTML] Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3| 4H-SiC
The impact of postbond annealing on the structural and thermal characteristics of 130 nm
thick exfoliated (2 01) β-Ga 2 O 3 (via H+ ion implantation) wafer bonded to (0001) 4H-SiC …
thick exfoliated (2 01) β-Ga 2 O 3 (via H+ ion implantation) wafer bonded to (0001) 4H-SiC …
In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1− x) 2O3 thin films
The in situ metalorganic chemical vapor deposition (MOCVD) growth of Al 2 O 3 dielectrics
on β-Ga 2 O 3 and β-(Al x Ga 1− x) 2 O 3 films is investigated as a function of crystal …
on β-Ga 2 O 3 and β-(Al x Ga 1− x) 2 O 3 films is investigated as a function of crystal …
Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3
In this work, we have investigated plasma-assisted deposition of Al 2 O 3 on HVPE (001) β-
Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated …
Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated …
Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on β-Ga2O3
In this article, we investigate the in situ growth of Al 2 O 3 on β-Ga 2 O 3 using metal-organic
chemical vapor deposition at a high temperature of 800 C. The Al 2 O 3 is grown within the …
chemical vapor deposition at a high temperature of 800 C. The Al 2 O 3 is grown within the …