An analysis is made of the ionization of deep impurity centers by high-intensity far-infrared
and submillimeter-wavelength radiation, with photon energies tens of times lower than the …

Intense Terahertz Excitation of Semiconductors presents the first comprehensive treatment
of high-power terahertz applications to semiconductors and low-dimensional semiconductor …

Publisher Summary This chapter focuses on the basic aspects of intersubband transitions,
with the main emphasis on linear absorption. An expression for the intersubband absorption …

We have experimentally measured the 1–2 intersubband absorption in a single 40 nm wide
modulation-doped Al 0.3 Ga 0.7 As/GaAs square quantum well as a function of frequency …

Results from calculations of temperature-dependent intrasubband and intersubband
electron-electron scattering rates in two subbands in a quasi-two-dimensional quantum well …

We report intersubband-scattering times (T 1) in a semiconductor heterostructure with
intersubband spacing below the LO phonon energy. T 1 is determined by simultaneous …

Abstract Using an ensemble Monte Carlo simulation, we have investigated intersubband
relaxation of photoexcited electrons in GaAs/Al x Ga 1− x As quantum wells having a …

In view of very disparate relaxation times measured in experiments on wide GaAs/Al x Ga 1−
x As quantum wells, we have calculated the electron–LO-phonon intersubband scattering …

GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at
frequency ω nir and intense far-infrared (FIR) radiation from a free-electron laser at ω fir …

We use linearized time-dependent (current) density-functional theory to study collective
transitions between the two lowest subbands in G a A s/A lx Ga 1− x As quantum wells. We …