This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

High‐performance memristors based on AlN films have been demonstrated, which exhibit
ultrafast ON/OFF switching times (≈ 85 ps for microdevices with waveguide) and relatively …

Memristors have been intensively studied in recent years as potential building blocks for the
construction of versatile neuromorphic architectures. The prevalent developments focus on …

The unique complementary switching behaviour of complementary resistive switches
(CRSs) makes them very attractive for logic applications. The implementation of complete …

The recent progress of selector and self‐rectifying devices for resistive random‐access
memory applications is reviewed. In particular, the performance of crossbar arrays based on …

Halide perovskites (HPs) are widely employed in a variety of applications including
optoelectronics, lasers, light-emitting diodes, and photovoltaics. As HPs are superb …

The search for self-rectifying resistive memories has aroused great attention due to their
potential in high-density memory applications without additional access devices. Here we …

Recently, transient electronic devices play an indispensable role in modern disposable
electronics and create potential application fields that cannot be addressed with …

Oxides-based resistive switching memory induced by oxygen ions migration is attractive for
future nonvolatile memories. Numerous works had focused their attentions on the …