Recent advances in guiding and localizing light at the nanoscale exposed the enormous
potential of ultrascaled plasmonic devices. In this context, the decay of surface plasmons to …

Copper oxide (CuO) quantum dots (QDs) having a diameter of 5–8 nm were synthesized by
a simple solution process. The as-synthesized QDs showed a highly crystalline monoclinic …

In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties
of silicon. By integrating vapor–liquid–solid-grown nanowires into a micromechanical …

Many techniques have been applied to fabricate nanostructures via top-down approach
such as electron beam lithography. However, most of the techniques are very complicated …

Atomic force microscope (AFM) nanolithography was performed to create nanowire
transistor pattern via local anodic oxidation process on surface of silicon-on-insulator (SOI) …

Ni-catalyzed silicon microwires (SiMWs) were grown on n-Si (111) substrate. The bottom
contacts of the SiMWs were selectively formed using Ni electrodeposition at the substrate …

Atomic force microscopy (AFM) lithography was applied to produce nanoscale pattern for
silicon nanowire transistor fabrication. This technique takes advantage of imaging facility of …

In this paper, we report on the feasibility of single nanowire devices fabrication by electron
beam lithography. SnO 2 and ZnO nanowires bundles have been synthesized by vapor …

Silicon nanowire transistor (SiNWT) was fabricated by using a silicon nanowire as a channel
which directly connected to the source (S) and drain (D). In this work, a side gate (G) …

According to an embodiment, a semiconductor memory device capable of stably operating
even when an element is shrunk is provided. The semiconductor memory device of the …