Active gate driver for improving current sharing performance of paralleled high-power SiC MOSFET modules
Y Wen, Y Yang, Y Gao - IEEE Transactions on power …, 2020 - ieeexplore.ieee.org
Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC
MOSFETs) are widely used in higher power density and higher efficiency power electronic …
MOSFETs) are widely used in higher power density and higher efficiency power electronic …
A Dynamic Current Balancing Method for Paralleled SiC MOSFETs Using Monolithic Si-RC Snubber Based on a Dynamic Current Sharing Model
The dynamic current imbalance between paralleled SiC mosfet s will cause unbalanced
losses and reduce current capacity. The existing current balancing methods will make the …
losses and reduce current capacity. The existing current balancing methods will make the …
Layout-dominated dynamic current imbalance in multichip power module: Mechanism modeling and comparative evaluation
The multichip power module is an irreplaceable component for high-capacity industrial
converters. Dynamic current imbalance among parallel chips challenges the electrothermal …
converters. Dynamic current imbalance among parallel chips challenges the electrothermal …
Selective gate driving in intelligent power modules
Due to practical limitations in the manufacturing of power semiconductor dies, high power
modules are composed of several dies in parallel in order to meet the desired load current …
modules are composed of several dies in parallel in order to meet the desired load current …
Flow boiling in novel radial microchannels for cooling of electronic devices and modules of annular temperature distribution
In this article, we propose a novel thermal management approach for power electronic
devices and modules of annular temperature distribution. The radial microchannel (RMC) …
devices and modules of annular temperature distribution. The radial microchannel (RMC) …
Measurement-based modeling of power module parasitics with increased accuracy
Simulating time-domain applications with multi-chip power modules requires estimating the
module's internal package impedances. This is especially true for modules designed with …
module's internal package impedances. This is especially true for modules designed with …
The Potential of Machine Learning for Thermal Modelling of SiC Power Modules-A Review
The introduction of silicon carbide (SiC) has reduced the superiority of traditional silicon-
based power module pack-aging strategies. As packaging strategies become increasingly …
based power module pack-aging strategies. As packaging strategies become increasingly …
A Dynamic Current Sharing Model of Multichip Parallel SiC MOSFETs Considering Layout-Dominated Mutual Inductance Coupling
Dynamic current imbalance of parallel SiC MOSFETs can lead to uneven losses and even
thermal runaway. Unbalanced parasitic parameters dominated by layout are one of the main …
thermal runaway. Unbalanced parasitic parameters dominated by layout are one of the main …
Comparative evaluation of Kelvin connection for current sharing of multi-chip power modules
High-capacity power module with multiple parallel chips is a key component for renewable
energy applications. Imbalance electro-thermal stresses among the parallel chips challenge …
energy applications. Imbalance electro-thermal stresses among the parallel chips challenge …
Design and implementation of a full analogue gate driver for current compensation of paralleled SiC‐MOSFETs
Silicon carbide MOSFETs have current ratings that are not sufficiently high to be used in
high‐power converters. It is necessary to connect several MOSFETs in parallel in order to …
high‐power converters. It is necessary to connect several MOSFETs in parallel in order to …