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[PDF] researching.cn

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …
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[PDF] springer.com

Ferroelectric capacitive memories: devices, arrays, and applications

Z Zhou, L Jiao, Z Zheng, Y Chen, K Han, Y Kang… - Nano …, 2025 - Springer
Ferroelectric capacitive memories (FCMs) utilize ferroelectric polarization to modulate
device capacitance for data storage, providing a new technological pathway to achieve two …
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[PDF] kuleuven.be

Investigation of imprint in FE-HfO₂ and its recovery

Y Higashi, B Kaczer, AS Verhulst… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Ferroelectric (FE)-HfO 2-based FETs (FEFETs) are one of the most promising candidates for
emerging memories. However, the FE material suffers from a unique reliability phenomenon …
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[PDF] kuleuven.be

Compact modeling of multidomain ferroelectric FETs: Charge trap**, channel percolation, and nucleation-growth domain dynamics

Y ** and fixed charge on subthreshold characteristics of FeFETs
C **, CJ Su, YJ Lee, PJ Sung… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Charge trap** (CT) and fixed charge (FC) are considered in the model of transient
negative capacitance (TNC). The roles of CT and FC on subthreshold characteristics of …
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Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors

P Cai, H Li, Z Liu, T Zhu, M Zeng, Z Ji… - … on Electron Devices, 2022 - ieeexplore.ieee.org
To fully understand the mechanisms for shifting of coercive field () during the bipolar stress
cycling in doped HfO 2 ferroelectric (FE) material, we present a systematic study with both …
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Modeling the coupled charge trap** dynamics in FeFETs for reliability characterizations

P Cai, H Li, Z Ji, L Zhang, R Wang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In this article, a compact physics framework is established to characterize the reliability-
related defects in ferroelectric field effect transistors (FeFETs). The two-state nonradiative …
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[PDF] ieee.org

Efficient erase operation by GIDL current for 3D structure FeFETs with gate stack engineering and compact long-term retention model

F Mo, J **ang, X Mei, Y Sawabe… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO 2 field
effect transistors (FeFETs) with overlap and underlap structures between gate and …
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