The need for decreasing semiconductor device critical dimensions at feature sizes below the
20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) …

The semiconductor industry has witnessed a continuous decrease in the size of logic,
memory and other computer chip components since its birth over half a century ago. The …

Extreme ultraviolet lithography (EUVL) was recently adopted by the semiconductor industry
as the leading-edge lithography technique for continued miniaturization of semiconductor …

Extreme ultraviolet (EUV) lithography (13.5 nm) is the newest technology that allows high-
throughput fabrication of electronic circuitry in the sub-20 nm scale. It is commonly assumed …

Extreme-ultraviolet (EUV) photolithography, which enables the high-throughput production
of well-defined patterns with critical dimensions on the scale of several nanometers, is …

Photoresist materials are being optimized for the recently introduced Extreme Ultraviolet
(EUV) photolithographic technology. Organometallic compounds are potential candidates …

Both the cluster chemistry of tin and lanthanides have attracted extensive research interest,
showing wide applications in catalysis, magnetism, luminescence, and lithography …

Organometallic tin-oxo-hydroxo cage compounds offer a promising photoresist platform for
extreme ultraviolet photolithography (EUVL). Their reactivity is dominated by the facile …

Three organotin carboxylate species stabilized by the same ligands, but varying in size and
structure, were studied to elucidate the effects of the structure on reactivity in the context of …

Details of the chemistry enabling the patterning of organotin photoresists to single-digit-nm
resolution continue to engage study. In this report, we examine the contributions of …