This paper reports the first fully integrated 24-GHz eight-element phased-array receiver in a
SiGe BiCMOS technology. The receiver utilizes a heterodyne topology and the signal …

A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-
GHz phased-array receiver using SiGe technology. Sixteen phases of the local oscillator are …

" Extreme environments" represents an important niche market for electronics and spans the
operation of electronic components in surroundings lying outside the domain of …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-
wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar …

This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T) of 207 GHz and
an f max extrapolated from Mason's unilateral gain of 285 GHz. f max extrapolated from …

This paper presents the first fully integrated 24-GHz phased-array transmitter designed
using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS …

Intersymbol interference (ISI) caused by intermodal dispersion in multimode fibers is the
major limiting factor in the achievable data rate or transmission distance in high-speed …

Transmission lines are implemented using an all-copper backend developed for RF and
microwave applications. Wavelength reduction is used to achieve a Q factor> 20 from …

This volume is the first in a series of three books addressing Electrostatic Discharge (ESD)
physics, devices, circuits and design across the full range of integrated circuit technologies …