Noise spectroscopy of molecular electronic junctions
Y Kim, H Song - Applied Physics Reviews, 2021 - pubs.aip.org
Over the past few decades, the field of molecular electronics has greatly benefited from
advances in the fundamental understanding of charge transport mechanisms. Molecular …
advances in the fundamental understanding of charge transport mechanisms. Molecular …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
An efficient and accurate memristive memory for array-based spiking neural networks
Memristors provide a tempting solution for weighted synapse connections in neuromorphic
computing due to their size and non-volatile nature. However, memristors are unreliable in …
computing due to their size and non-volatile nature. However, memristors are unreliable in …
Characterization and modeling of flicker noise in FinFETs at advanced technology node
1/noise is characterized on thick and thin-gate oxide-based FinFETs for different channel
lengths. The devices exhibit gate bias dependence in 1/noise even in the weak-inversion …
lengths. The devices exhibit gate bias dependence in 1/noise even in the weak-inversion …
Optimizations for a current-controlled memristor-based neuromorphic synapse design
The synapse is a key element of neuromorphic computing in terms of efficiency and
accuracy. In this paper, an optimized current-controlled memristive synapse circuit is …
accuracy. In this paper, an optimized current-controlled memristive synapse circuit is …
Flicker Noise (1/f) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications
In this paper, we have investigated the flicker noise (1/) in 45-nm RFSOI NFETs for quantum
computing applications. 1/noise characterization and analysis were performed in linear …
computing applications. 1/noise characterization and analysis were performed in linear …
Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics
PK Darmawi-Iskandar, AM Aaron… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
Total ionizing dose (TID) irradiation and low-frequency noise characterization are performed
on carbon nanotube field-effect transistors (CNTFETs). Large hysteresis due to high border …
on carbon nanotube field-effect transistors (CNTFETs). Large hysteresis due to high border …
Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs
This work reports the impact of gate oxide thickness on flicker noise (1/f) in 45-nm RFSOI
NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is …
NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is …
Improved modeling of flicker noise including velocity saturation effect in FinFETs and experimental validation
R Goel, W Wang, YS Chauhan - Microelectronics Journal, 2021 - Elsevier
BSIM-CMG can fit low frequency noise spectrum in the linear region of operation, but
deviates in the saturation region of operation, because the noise model used in BSIM-CMG …
deviates in the saturation region of operation, because the noise model used in BSIM-CMG …