GaN: Processing, defects, and devices
The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …
electrical and optical properties of GaN is reviewed. Recent progress in the development of …
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
D Li, M Sumiya, S Fuke, D Yang, D Que… - Journal of Applied …, 2001 - pubs.aip.org
Etching characteristics of nondoped GaN films with the polar surface in KOH solution have
been investigated. It is confirmed that the continuous etching in KOH solution takes place …
been investigated. It is confirmed that the continuous etching in KOH solution takes place …
Growth of group III nitrides. A review of precursors and techniques
DA Neumayer, JG Ekerdt - Chemistry of materials, 1996 - ACS Publications
The AlGaInN quaternary alloy system is uniquely suited for numerous device applications
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …
X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride
SD Wolter, BP Luther, DL Waltemyer, C Önneby… - Applied Physics …, 1997 - pubs.aip.org
The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray
photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750° C for up …
photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750° C for up …
Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
J Kuzmik, R Javorka, A Alam, M Marso… - IEEE transactions on …, 2002 - ieeexplore.ieee.org
Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and
sapphire substrates are studied, exploiting transistor DC characterization methods. A …
sapphire substrates are studied, exploiting transistor DC characterization methods. A …
Electronic structure of nanostructured ZnO from x-ray absorption and emission spectroscopy and the local density approximation
O 1 s absorption spectroscopy (XAS) and OK α emission spectroscopy (XES) were
performed to study the electronic structure of nanostructured ZnO. The band gap is …
performed to study the electronic structure of nanostructured ZnO. The band gap is …
Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon
J Kuzmík, S Bychikhin, M Neuburger… - … on Electron Devices, 2005 - ieeexplore.ieee.org
We studied a temperature increase and a heat transfer into a substrate in a pulsed operation
of 0.5 length and 150/spl mu/m gate width AlGaN/GaN HEMTs grown on silicon. A new …
of 0.5 length and 150/spl mu/m gate width AlGaN/GaN HEMTs grown on silicon. A new …
Observation of dipole-mode vector solitons
We report on the first experimental observation of a novel type of optical vector soliton, a
dipole-mode soliton, recently predicted theoretically. We show that these vector solitons can …
dipole-mode soliton, recently predicted theoretically. We show that these vector solitons can …
Sputter deposition of gallium nitride films using a GaAs target
N Elkashef, RS Srinivasa, S Major, SC Sabharwal… - Thin Solid Films, 1998 - Elsevier
GaAs was used as the target material for the deposition of GaN films by reactive sputtering.
The films were grown at different compositions of the sputtering gas mixture (0–100 …
The films were grown at different compositions of the sputtering gas mixture (0–100 …
High thermally conductive and electrically insulating 2D boron nitride nanosheet for efficient heat dissipation of high-power transistors
High-power transistors suffer greatly from inefficient heat dissipation of the hotspots, which
elevate the local temperature and significantly degrade the performance and reliability of the …
elevate the local temperature and significantly degrade the performance and reliability of the …