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Computationally predicted energies and properties of defects in GaN
Recent developments in theoretical techniques have significantly improved the predictive
power of density-functional-based calculations. In this review, we discuss how such …
power of density-functional-based calculations. In this review, we discuss how such …
[HTML][HTML] A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire
Y Nagasawa, A Hirano - Applied Sciences, 2018 - mdpi.com
Featured Application Sterilization, UV curing and printing, and phototherapy. Abstract This
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
Carbon is a common impurity in the group-III nitrides, often unintentionally incorporated
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …
during growth. Nevertheless, the properties of carbon impurities in the nitrides are still not …
Dopants and defects in ultra-wide bandgap semiconductors
Ultra-wide bandgap semiconductors, with bandgaps greater than 3.5 eV, have immense
potential in power-switching electronic applications and ultraviolet light emitters. But the …
potential in power-switching electronic applications and ultraviolet light emitters. But the …
A first-principles understanding of point defects and impurities in GaN
Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
Experimental observation of high intrinsic thermal conductivity of AlN
Wurtzite AlN is an ultrawide bandgap semiconductor that has been developed for
applications including power electronics and optoelectronics. Thermal management of these …
applications including power electronics and optoelectronics. Thermal management of these …
Deep traps in GaN-based structures as affecting the performance of GaN devices
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type do** over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
Hybrid functional calculations of centers in AlN and GaN
Using hybrid functional calculations, we investigate the formation of DX centers in GaN and
AlN. We find that O, Si, and Ge are shallow donors in GaN, but form stable DX centers in AlN …
AlN. We find that O, Si, and Ge are shallow donors in GaN, but form stable DX centers in AlN …