Polycrystalline erbium-doped Y3Ga5O12 garnet (YGG) nanofilms are deposited by atomic
layer deposition on Si substrates after annealing down to 800° C, based on which∼ 1.53 μm …

In active silica optical fibers, improving the solubility and uniformity of non-concentration-
quenching luminescence centers is a key strategy to achieve high gain fiber amplifiers …

Nowadays, trivalent rare-earth ions activated inorganic luminescent materials have been
widely investigated owing to their important applications in solid-state lighting field. Tm 3+ …

We prepared Yb^ 3+ doped SiO_2-SnO_2: Er^ 3+ films by sol-gel method in order to
develop the high-efficient rare-earth light emitting devices. The enhanced characteristic near …

Quantum dots (QDs) with an alloy shell (CdSe@ ZnS/ZnS) are one of the most promising
emitters for optoelectronic devices for their superior properties such as narrow full width at …

Efficient and stable near-infrared silicon-based light source is a challenge for future
optoelectronic integration and interconnection. In this paper, alkaline earth metal Ca^ 2+ …

This study reports the growth of SnO2 nanocrystals (NCs) in mesoporous silica glasses and
its great enhancement of Eu3+ photoluminescence at around 590 nm wavelength-band …

Ba2+ ions co-doped SiO2–SnO2: Er3+ thin films are prepared using a sol–gel method
combined with a spin-coating technique and post-annealing treatment. The influence of …

Advanced material combining with novel 3D radial junction design is an attractive strategy to
fabricate low-cost high-efficiency thin film solar cells. For improving the power conversion …

Er-doped optical fiber (EDF) with ultra-broad gain bandwidth is urgently needed given the
rapid advancement of optical communication. However, the weak crystal field of the host …