Two-dimensional ferroelectric monolayers are promising candidates for compact memory
devices and flexible electronics. Here, through first-principles calculations, we predict room …

Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices
and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of …

In this brief, we present a charge-based compact model to describe the Flicker noise or low-
frequency noise (LFN) behavior in 2-D field-effect transistors (FETs). The model self …

Context and results The structure, electronic and optical properties of single-layer transition
metallic chalcogenides ZrX3 (X= S, Se, Te) have been studied by density functional theory …

The ongoing pursuit of exploring novel materials for potential future device applications
continues to strengthen the vital role of Technology Computer-Aided Design (TCAD) …

Ferroelectric materials have garnered significant interest in high-speed, low-power field-
effect transistors and non-volatile high-density memory devices. However, the increasing …

Over the last 60 years, the continuous miniaturization of transistors has allowed for
enhanced density and functionality on the chip and significant improvements in switching …

The two-dimensional (2-D) materials hold promise for the ultra-scaled future logic devices.
Major semiconductor companies are actively dedicating substantial resources to advancing …