Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx: H) thin films enjoy widespread
scientific interest across multiple application fields. Exceptional combination of optical …

In this letter, reduction of threshold voltage instability in gate recessed normally-off GaN
metal insulator semiconductor high electron mobility transistors with SiN x gate insulator was …

Application of Kelvin probe force gradient microscopy (KPFGM) to visualize the local charge
dissipation in thin dielectric layers is considered. By this method, the local charge behavior …

In this work, we show that a bilayer SiN x passivation scheme which includes a high-
temperature annealed SiN x as gate dielectric, significantly improves both ON and OFF state …

The effect of post-deposition rapid thermal annealing (RTA) on p-type Czochralski silicon
surface passivation by plasma-enhanced chemical vapor deposited nitrogen-rich silicon …

Silicon nitride (Si 3 N 4) is commonly used as the charge storage layer of nonvolatile charge
trap flash (CTF) memory devices. Previous theoretical investigations have shown a large …

As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the
surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to …

We investigate the surface passivation of crystalline silicon (c-Si) wafers that are textured
with random upright pyramids and passivated with amorphous silicon nitride (SiN _x). Over …

This paper reports an effective and industrially relevant passivation and antireflection film
stack featuring a 10 nm silicon dioxide (SiO 2) film followed by a≈ 65 nm amorphous …

The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiCx)
films was analyzed in this study using nitrogen do**. The increase in nitrogen do** …