Reliability is one of the key issues for the application of Insulated Gate Bipolar Transistors
(IGBTs) in power electronic converters. Many efforts have been devoted to the reduction of …

Since insulated gate bipolar transistor (IGBT) is a core component for power conversion in a
power electronic system, guaranteeing the safety of IGBT becomes a crucial task for the …

The behavior of the insulated gate bipolar transistor (IGBT) module results in the electric
field, temperature field, and stress field, and there are strong coupling effects among its …

Although insulated-gate bipolar-transistor (IGBT) turn-on losses can be comparable to turn-
off losses, IGBT turn-on has not been as thoroughly studied in the literature. In the present …

Although with good robustness, insulated gate bipolar transistor (IGBT) modules suffer from
catastrophic failures due to excessive electrothermal stress in field use. In view of the …

With the demands for increasing the power rating and improving reliability level of the high
power IGBT modules, there are further needs of understanding how to achieve stable …

This paper presents a new lumped-charge approach-based physical model for high power
soft-punchthrough (SPT) insulated gate bipolar transistor (IGBT). The IGBT physical models …

This article proposes a new lumped-charge model for power semiconductor devices. The
existing lumped-charge model, due to its linear modeling method, has some limitations that …

The lumped-charge (LC) model of insulated-gate bipolar transistor (IGBT) provides an
effective and efficient way to study its characteristics. However, the quasi-static assumption …

The snappy reverse recovery (SRR) and failure of high-voltage nonpunch-through (NPT)
PIN diodes under extreme working conditions are of great significance to the reliability …