Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
In this paper, we present finite element simulation results of the transient stress response of
an AlGaN/GaN high electron mobility transistor (HEMT). The modeling technique involves a …
an AlGaN/GaN high electron mobility transistor (HEMT). The modeling technique involves a …
Guidelines for reduced-order thermal modeling of multifinger GaN HEMTs
The increasing demand for tightly integrated gallium nitride high electron mobility transistors
(HEMT) into electronics systems requires accurate thermal evaluation. While these devices …
(HEMT) into electronics systems requires accurate thermal evaluation. While these devices …
Electro-thermal reliability study of GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMT) degrades device
performance and reliability. Under nominal operating conditions, a so-called hot spot …
performance and reliability. Under nominal operating conditions, a so-called hot spot …
The effects of gate-connected field plates on hotspot temperatures of AlGaN/GaN HEMTs
To increase the reliability and the maximum performance of AlGaN/GaN high electron
mobility transistors (HEMTs), gate field plates are frequently used with surface passivation …
mobility transistors (HEMTs), gate field plates are frequently used with surface passivation …
AlGaN/GaN HEMT device physics and electrothermal modeling
Gallium nitride (GaN) has emerged as one of the most attractive materials for radio
frequency (RF) and power conversion technologies that require high-power and high …
frequency (RF) and power conversion technologies that require high-power and high …
Electro-thermal device-package co-design for ultra-wide bandgap gallium oxide power devices
The ultra-wide bandgap (UWBG) of Ga2O 3 allows it to achieve over nearly 1033-times
lower intrinsic carrier concentration than silicon (Si), permitting Ga2O 3 devices to operate at …
lower intrinsic carrier concentration than silicon (Si), permitting Ga2O 3 devices to operate at …
The thermal effects of substrate removal on GaN HEMTs using Raman Thermometry
The ability to fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on Si
substrates has enabled the production of low cost high power electronics. To further …
substrates has enabled the production of low cost high power electronics. To further …
Time dependent shift in SOA boundary and early breakdown of epi-stack in AlGaN/GaN HEMTs under fast cyclic transient stress
This experimental study reports first observations of (i) SOA boundary shift in AlGaN/GaN
HEMTs and (ii) early time-to-fail of vertical AlGaN/GaN epi-stack under fast changing (sub …
HEMTs and (ii) early time-to-fail of vertical AlGaN/GaN epi-stack under fast changing (sub …
Integrated temperature map** of lateral gallium nitride electronics
For the first time, an integrated thermal characterization scheme that generates a full two-
dimensional temperature map of GaN lateral devices has been developed. Through …
dimensional temperature map of GaN lateral devices has been developed. Through …
Nanometer-scale strain measurements in AlGaN/GaN high-electron mobility transistors during pulsed operation
Electric, thermal, and mechanical strain fields drive the degradation of AlGaN/GaN high-
electron mobility transistors (HEMTs). The resulting mechanical strains within the devices …
electron mobility transistors (HEMTs). The resulting mechanical strains within the devices …