What lurks below the last plateau: experimental studies of the 0.7× 2e2/h conductance anomaly in one-dimensional systems

AP Micolich - Journal of Physics: Condensed Matter, 2011 - iopscience.iop.org
The integer quantised conductance of one-dimensional electron systems is a well-
understood effect of quantum confinement. A number of fractionally quantised plateaus are …

Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction

S Studenikin, M Korkusinski, A Bogan… - Semiconductor …, 2021 - iopscience.iop.org
There is rapidly expanding interest in exploiting the spin of valence-band holes rather than
conduction-band electrons for spin qubit semiconductor circuits composed of coupled …

Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET

B Voisin, R Maurand, S Barraud, M Vinet, X Jehl… - Nano …, 2016 - ACS Publications
Hole spins in silicon represent a promising yet barely explored direction for solid-state
quantum computation, possibly combining long spin coherence, resulting from a reduced …

Kondo effect in a quantum dot side-coupled to a topological superconductor

M Lee, JS Lim, R López - Physical Review B—Condensed Matter and …, 2013 - APS
We investigate the dynamical and transport features of a Kondo dot side coupled to a
topological superconductor (TS). The Majorana fermion states (MFSs) formed at the ends of …

Observation of spin-selective tunneling in SiGe nanocrystals

G Katsaros, VN Golovach, P Spathis, N Ares… - Physical Review Letters, 2011 - APS
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is
reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field …

SU (3) Kondo effect in spinless triple quantum dots

R Lopez, T Rejec, J Martinek, R Žitko - Physical Review B—Condensed Matter …, 2013 - APS
We discuss a device—a purely capacitively coupled interacting triple quantum dot system in
an external magnetic field—for the observation of the SU (3) Kondo effect, identified by the …

Single hole transport in a silicon metal-oxide-semiconductor quantum dot

R Li, FE Hudson, AS Dzurak, AR Hamilton - Applied Physics Letters, 2013 - pubs.aip.org
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor,
which is compatible with conventional Si complementary MOS fabrication. A multi-layer gate …

Non-adiabatic single-electron pumps in a dopant-free GaAs/AlGaAs 2DEG

B Buonacorsi, F Sfigakis, A Shetty, MC Tam… - Applied Physics …, 2021 - pubs.aip.org
We have realized quantized charge pum** using non-adiabatic single-electron pumps in
dopant-free GaAs two-dimensional electron gases. The dopant-free III–V platform allows for …