As an extended member of the thermoelectric family, ionic thermoelectrics (i‐TEs) exhibit
exceptional Seebeck coefficients and applicable power factors, and as a result have …

Interfacial thermal resistance is the primary impediment to heat flow in materials and devices
as characteristic lengths become comparable to the mean‐free paths of the energy carriers …

High thermal conductivity electronic materials are critical components for high-performance
electronic and photonic devices as both active functional materials and thermal …

The coupled interactions among the fundamental carriers of charge, heat, and
electromagnetic fields at interfaces and boundaries give rise to energetic processes that …

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …

The heat dissipation issue has now become one of the most important bottlenecks for power
electronics due to the rapid increase in power density and working frequency. Towards the …

The ultrawide band gap, high breakdown electric field, and large-area affordable substrates
make β-Ga2O3 promising for applications of next-generation power electronics, while its …

Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for
interfacial thermal transport were derived based on bulk phonon properties of the materials …

The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Gallium oxide (Ga 2 O 3) has attracted great attention for electronic device applications due
to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates …