A review of NBTI mechanisms and models
A comprehensive review is done of different NBTI mechanisms and models proposed in the
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation
A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …
bias temperature instability stress and recovery during and after dc and ac stresses and also …
[КНИГА][B] Fundamentals of bias temperature instability in mos transistors
S Mahapatra - 2016 - Springer
Bias Temperature Instability (BTI) is a serious reliability concern and continues to threaten
the performance and lifetime of Complementary MOS (CMOS) devices and circuits. BTI …
the performance and lifetime of Complementary MOS (CMOS) devices and circuits. BTI …
Universality of NBTI-From devices to circuits and products
S Mahapatra, V Huard, A Kerber… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
This paper showcases the universality of NBTI and its dependencies on time, bias,
temperature, AC frequency and pulse duty cycle across different process integration …
temperature, AC frequency and pulse duty cycle across different process integration …
Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs
Independent Trap Generation (TG) monitors such as DCIV and SILC have been used during
NBTI, PBTI (and TDDB) stress in differently processed HKMG devices. TG from DCIV for …
NBTI, PBTI (and TDDB) stress in differently processed HKMG devices. TG from DCIV for …
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs
A comprehensive modeling framework involving mutually uncorrelated contribution from
interface trap generation and hole trap** in pre-existing, process related gate insulator …
interface trap generation and hole trap** in pre-existing, process related gate insulator …
A comparative study of NBTI and PBTI using different experimental techniques
Degradation in planar high-k metal gate pand n-channel MOSFETs, respectively, under
negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) …
negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) …
Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs
Negative Bias Temperature Instability (NBTI) is due to interface trap generation (ΔN IT) and
trap** of holes in gate insulator traps (ΔN HT). However, the isolation methods and the …
trap** of holes in gate insulator traps (ΔN HT). However, the isolation methods and the …
Consistency of the two component composite modeling framework for NBTI in large and small area p-MOSFETs
A Chaudhary, B Fernandez, N Parihar… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Consistency of the recently proposed deterministic composite modeling framework for
Negative Bias Temperature Instability (NBTI) in large area devices is verified for stochastic …
Negative Bias Temperature Instability (NBTI) in large area devices is verified for stochastic …
A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs
DC and AC NBTI in deep EOT scaled HKMG p-MOSFETs with different IL (scaled to sub 2Å)
are measured by UF-MSM method with 10µs delay. A model with interface trap generation …
are measured by UF-MSM method with 10µs delay. A model with interface trap generation …