Complementary metal oxide semiconductor-compatible short-and midwave infrared emitters
are highly coveted for the monolithic integration of silicon-based photonic and electronic …

Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …

We present results on CVD growth and electro-optical characterization of Ge_0. 92Sn_0.
08/Ge pin heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn …

An efficient electrically injected group-IV light source compatible with the complementary
metal-oxide-semiconductor (CMOS) process is the holy grail for realizing functional …

Silicon-compatible short-and midwave infrared emitters are highly sought after for on-chip
monolithic integration of electronic and photonic circuits to serve a myriad of applications in …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

We demonstrate room-temperature, mid-infrared resonant electroluminescence from GeSn
resonant-cavity LEDs with a lateral pin configuration on a silicon-on-insulator substrate. A …

In this work, the structural evolution and photoluminescence (PL) of 200 nm pseudomorphic
Ge 0.9338 Sn 0.0662 on Ge (001) substrate grown by low-temperature molecular beam …

Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …

Chemical vapor deposition methods were developed, using stoichiometric reactions of
specialty Ge 3 H 8 and SnD 4 hydrides, to fabricate Ge 1-y Sn y photodiodes with very high …