Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Vertical growth rate of highly anisotropic III–V nanostructures, including the vapor–liquid–
solid or catalyst-free nanowires and quasi-one-dimensional nanomembranes obtained by …

In this work, we give a detailed overview of theoretical methods used for modeling the vapor–
liquid–solid (VLS) growth of III–V semiconductor nanowires. We emphasis the importance of …

Despite the numerous reports on the metal-catalyzed growth of GaN nanowires, the
mechanism of growth is not well understood. Our study of the nickel-assisted growth of GaN …

In this work, we present a theoretical analysis of the diffusion-induced growth of “vapor–
liquid–solid” nanowires, based on the stationary equations with generalized boundary …

Controllable do** of III–V nanowires grown by the vapor–liquid–solid method remains a
challenging task. In sharp contrast to planar layers of the same materials, dopants mainly …

The free electron carrier concentrations in single InP core–shell nanowires are determined
by micro-photoluminescence, cathodoluminescence (CL) and Hall effect measurements …

Semiconductor nanowires suffer from significant non-radiative surface recombination;
however, heavy p-type do** has proven to be a viable option to increase the radiative …