Recent experimentation, performed on bulk wurtzite InN, suggests that the energy gap, the
effective mass of the electrons in the lowest-energy valley, and the nonparabolicity …

Analytic-band Monte Carlo simulation of electron transport in bulk wurtzite ZnO, validated
against the results of a full-band code and available experimental data, is used to determine …

The ab initio theory of low-field electronic transport properties such as carrier mobility in
semiconductors is well-established. However, an equivalent treatment of electronic …

The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium
nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material …

Using a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-
state and transient electron transport that occurs within bulk wurtzite InN using a revised set …

Conditions required for the streaming effect and the optical-phonon transit-time resonance to
take place in a compensated bulk GaN are analyzed in detail. Monte Carlo calculations of …

A deterministic model for electron velocity fluctuations in a non-equilibrium bulk electron–
phonon system is presented. The model is based on the spherical harmonics expansion of …

Electronic noise, or stochasticity in the current, voltage, and frequency of a carrier signal is
caused by microscopic fluctuations in the occupation of quantum electronic states. In the …

Общая характеристика работы Актуальность темы Одним из важных направлений в
современной физике является исследование коле бательных и волновых процессов в …

Phonon-phonon and electron-phonon interactions underlie many fundamental transport
properties like thermal conductivity and electrical mobility, and models of these properties …