Sulfur hexafluoride (SF 6) is widely used in the power industry, metallurgy, electronics, etc.
due to its excellent insulation and stability properties, while it is the most greenhouse gas …

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary
features in the applications of high power and high frequency devices. In this paper, we …

We report on the high-field transport characteristics and saturation velocity in a modulation-
doped β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 heterostructure. The formation of a 2-D electron gas …

This work reports recent progress in the sub-6 GHz power performance of GaN-based
HEMTs grown on high resistivity silicon substrates with passivation implanted termination …

We make a 2-D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with
a high-k passivation layer, and the results are compared with those having a normal SiN …

A GaN Schottky barrier diode (SBD) on SiC for frequency doubler applications was
fabricated with a N-/N+ GaN stack of 200 nm/1500 nm in thickness and 5× 10 17 cm-3/8× 10 …

In this article, the superior power performance of a double-channel high-electron-mobility
transistor (HEMT) operating at a high drain voltage of sub-6 GHz was demonstrated using a …

In this letter, the AlGaN/GaN/graded-AlGaN: Si-doped/GaN double channel (GDC-SI) high
electronic mobility transistors (HEMTs) with high saturation current density and linearity have …

In this paper, we demonstrated AlGaN/GaN metal-insulator-semiconductor high-electron
mobility transistors (MIS-HEMTs) with AlN gate dielectric grown by plasmaenhanced atomic …

2-D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors
(HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer …