High-K materials and metal gates for CMOS applications
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
High dielectric constant oxides
J Robertson - The European Physical Journal-Applied Physics, 2004 - cambridge.org
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …
Atomic Heterointerface Engineering of Ni2P‐NiSe2 Nanosheets Coupled ZnP‐Based Arrays for High‐Efficiency Solar‐Assisted Water Splitting
In this study, heterogeneous nickel phosphide‐nickel selenide (Ni2P‐NiSe2) nanosheets
are constructed to coat zinc phosphide‐based nanorods (ZnP NRs) under a unique core …
are constructed to coat zinc phosphide‐based nanorods (ZnP NRs) under a unique core …
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson - Reports on progress in Physics, 2005 - iopscience.iop.org
The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …
Development of hafnium based high-k materials—A review
The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …
field effect transistor is considered one of the most dramatic advances in materials science …
Interfaces are the dominant feature of dielectrics at the nanometric level
TJ Lewis - IEEE transactions on dielectrics and electrical …, 2004 - ieeexplore.ieee.org
It is argued that the behavior of dielectric particles as they shrink in size through micrometric
to nanometric scales will be increasingly dominated by the properties of their interfaces with …
to nanometric scales will be increasingly dominated by the properties of their interfaces with …
CMOS‐technology‐enabled flexible and stretchable electronics for internet of everything applications
Flexible and stretchable electronics can dramatically enhance the application of electronics
for the emerging Internet of Everything applications where people, processes, data and …
for the emerging Internet of Everything applications where people, processes, data and …
Band offsets of high K gate oxides on III-V semiconductors
J Robertson, B Falabretti - Journal of applied physics, 2006 - pubs.aip.org
III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
Interfaces: nanometric dielectrics
TJ Lewis - Journal of Physics D: Applied Physics, 2005 - iopscience.iop.org
The incorporation of nanometric size particles in a matrix to form dielectric composites
shows promise of materials (nanodielectrics) with new and improved properties. It is argued …
shows promise of materials (nanodielectrics) with new and improved properties. It is argued …
A ferroelectric oxide made directly on silicon
Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon,
have undergone four decades of staggering technological advancement. With fundamental …
have undergone four decades of staggering technological advancement. With fundamental …