SiC, as a representative of the third generation semiconductors, is widely investigated in
power devices and sensors. However, ohmic contacts, an important component for signal …

The CrTiSiCN coatings were prepared by multi-arc ion plating technology on 316L stainless
steel and TC4 alloy. The tribological behaviors of CrTiSiCN coatings sliding against Si 3 N 4 …

Multilayer graphene on SiC is a promising material due to its compatibility with modern
electronics technology. Herein, we demonstrate the growth of large-area (~ 10× 5 mm 2) …

Abstract A novel 1440‐V 4H‐SiC accumulation mode MOSFET (ACCUFET) with ultra‐low
specific on‐resistance and improved reverse recovery performance is proposed in this …

Pressureless sintered silicon carbide (PS-SiC) ceramics are widely used as friction materials
in the aerospace industry, and enhancing the self-lubricating properties of PS-SiC ceramics …

A novel high-performance 1700-V 4H-Silicon carbide (SiC) junction field-effect transistor
(JFET) with reverse recovery capability and low switching loss is proposed in this article. As …

Laser annealing has attracted significant attention for ohmic contacts of the 4H-SiC
substrate, especially Ni-based ohmic contact. In this study, a metallic cap** layer (Ti, Nb …

A real-time temperature measurement technique with high spatial (≤ 20 μm) and temporal
(≤ 1 μs) resolutions for SiC wafers during ultra-rapid thermal annealing (URTA) has been …

Laser irradiation can induce local modulations of functional material properties, such as a
decreased resistivity or a variation in reflectance. Recent studies investigated the laser …

In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type
N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal …