A review on III–V compound semiconductor short wave infrared avalanche photodiodes
Y Liang, CP Veeramalai, G Lin, X Su, X Zhang… - …, 2022 - iopscience.iop.org
The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated
photonics system. Specifically, III–V compound APD has become one of the main …
photonics system. Specifically, III–V compound APD has become one of the main …
Low noise Al0. 85Ga0. 15As0. 56Sb0. 44 avalanche photodiodes on InP substrates
We report on the demonstration of Al 0.85 Ga 0.15 As 0.56 Sb 0.44 (hereafter, AlGaAsSb)
avalanche photodiodes (APDs) with a 1000 nm-thick multiplication layer. Such a thick …
avalanche photodiodes (APDs) with a 1000 nm-thick multiplication layer. Such a thick …
AlInAsSb avalanche photodiodes on InP substrates
We report the gain, noise, and dark current characteristics of random alloy Al 0.79 In 0.21 As
0.74 Sb 0.26 (hereafter AlInAsSb)-based avalanche photodiodes (APDs) on InP substrates …
0.74 Sb 0.26 (hereafter AlInAsSb)-based avalanche photodiodes (APDs) on InP substrates …
High responsivity Si-Ge waveguide avalanche photodiodes enhanced by loop reflector
We present a loop reflector-assisted silicon-germanium waveguide avalanche photodiode
with improved responsivity. Compared to the same APD without the reflector, it has 1.49 …
with improved responsivity. Compared to the same APD without the reflector, it has 1.49 …
Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates
We demonstrate low noise random alloy (RA) Al 0.85 Ga 0.15 AsSb (hereafter AlGaAsSb)
avalanche photodiodes (APDs) nearly lattice-matched to InP substrates. In contrast to digital …
avalanche photodiodes (APDs) nearly lattice-matched to InP substrates. In contrast to digital …
Phase evolution and fluorescence stability of CsPb 2 Br 5 microwires and their application in stable and sensitive photodetectors
N Jiang, J Wei, M Lv, Y Rong, C Wang, Y Liu… - Journal of Materials …, 2023 - pubs.rsc.org
As a special two-dimensional layered perovskite material, CsPb2Br5 has attracted great
attention and shows great stability and excellent photoelectric performance. Herein, a simple …
attention and shows great stability and excellent photoelectric performance. Herein, a simple …
Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field Range
Digital alloy and random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44 avalanche photodiodes
(APDs) exhibit low excess noise, comparable to Si APDs. Consequently, this material is a …
(APDs) exhibit low excess noise, comparable to Si APDs. Consequently, this material is a …
Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate
We report on engineering impact ionization characteristics of In0. 53Ga0. 47As/Al0. 48In0.
52As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to …
52As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to …
High-speed III-V based avalanche photodiodes for optical communications—the forefront and expanding applications
M Nada, F Nakajima, T Yoshimatsu… - Applied Physics …, 2020 - pubs.aip.org
Avalanche photodiodes (APDs), ie, semiconductor devices, which convert and amplify
optical signals into electrical signals, are used for optical communications and for imaging …
optical signals into electrical signals, are used for optical communications and for imaging …
AlInAsSb impact ionization coefficients
Digital alloy AlInAsSb avalanche photodiodes exhibit low excess noise comparable to those
fabricated from Si. The electron and hole ionization coefficients are critical parameters for …
fabricated from Si. The electron and hole ionization coefficients are critical parameters for …