Radiation effects in algan/gan hemts
DM Fleetwood, EX Zhang, RD Schrimpf… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …
High-efficiency envelope-tracking W-CDMA base-station amplifier using GaN HFETs
DF Kimball, J Jeong, C Hsia, P Draxler… - IEEE Transactions …, 2006 - ieeexplore.ieee.org
A high-efficiency wideband code-division multiple-access (W-CDMA) base-station amplifier
is presented using high-performance GaN heterostructure field-effect transistors to achieve …
is presented using high-performance GaN heterostructure field-effect transistors to achieve …
Facilitation of GaN-based RF-and HV-circuit designs using MVS-GaN HEMT compact model
U Radhakrishna, P Choi… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper illustrates the usefulness of the physics-based compact device models in
investigating the impact of device behavioral nuances on the operation and performance of …
investigating the impact of device behavioral nuances on the operation and performance of …
Accurate multibias equivalent-circuit extraction for GaN HEMTs
G Crupi, D **_Effects/links/54acc8d80cf21c47713a73eb/A-Wideband-Multiharmonic-Empirical-Large-Signal-Model-for-High-Power-GaN-HEMTs-With-Self-Heating-and-Charge-Trap**-Effects.pdf" data-clk="hl=iw&sa=T&oi=gga&ct=gga&cd=8&d=531245251106169274&ei=-LLIZ5zFGZeY6rQPjuS70As" data-clk-atid="uuHLwL1cXwcJ" target="_blank">[PDF] researchgate.net
A wideband multiharmonic empirical large-signal model for high-power GaN HEMTs with self-heating and charge-trap** effects
KS Yuk, GR Branner… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT)
utilizing an improved drain current (Ids) formulation with self-heating and charge-trap** …
utilizing an improved drain current (Ids) formulation with self-heating and charge-trap** …
Modeling GaN: powerful but challenging
L Dunleavy, C Baylis, W Curtice… - IEEE Microwave …, 2010 - ieeexplore.ieee.org
As GaN technology has developed, first in research laboratories and more recently in
multiple commercial device manufacturers, the demand for improved nonlinear models has …
multiple commercial device manufacturers, the demand for improved nonlinear models has …