Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …

This study offers an in-depth examination of aluminum gallium arsenide (AlGaAs) as a high-
performance and durable material for photoelectrochemical water splitting, a key method of …

The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …

Room-temperature lasing based on low-dimensional GaAs nanowires (NWs) is one of the
most critical and challenging issues in realizing near-infrared lasers for nanophotonics. In …

In the context of effective mass approximation and using the finite element method, we
studied the optical properties of a hydrogenic donor impurity centered in a core/shell …

When semiconducting nanowires are grown by vapor–liquid–solid mechanism using gold
as catalyst, the first stages, ie, gold deposition and subsequent annealing, are of prime …

Organometallic perovskites are one of the most investigated materials for high-efficiency thin-
film devices to convert solar energy and supply energy. In particular, methylammonium lead …

Selective area epitaxy is a powerful growth technique that has been used to produce III–V
semiconductor nanowire and nanomembrane arrays for photonic and electronic …