Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for
quantum information processing compatible with nanofabrication processes and device …

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …

Color centers are point defects in crystals that can provide an optical interface to a long-lived
spin state for distributed quantum information processing applications. An outstanding …

Label-free detection of nanoparticles is essential for a thorough evaluation of their cellular
effects. In particular, nanoparticles intended for medical applications must be carefully …

Spin-active quantum emitters have emerged as a leading platform for quantum
technologies. However, one of their major limitations is the large spread in optical emission …

Color centers in wide bandgap semiconductors are prominent candidates for solid-state
quantum technologies due to their attractive properties including optical interfacing, long …

We report the narrow inhomogeneous distribution of the zero-phonon line from tin-vacancy
(Sn-V) centers in diamond and the overlap of spectra from multiple separated Sn-V centers …

Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum
bits. Here we probe and characterize the particularly rich nuclear-spin environment around …

An outstanding challenge for color center-based quantum information processing
technologies is the integration of optically-coherent emitters into scalable thin-film photonics …

Colour centres in silicon carbide emerge as a promising semiconductor quantum technology
platform with excellent spin-optical coherences. However, recent efforts towards maximising …