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[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …
with this challenge, massive efforts have been devoted to the development of advanced …
Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials
Phase‐change random access memory (PCRAM) is one of the most technologically mature
candidates for next‐generation non‐volatile memory and is currently at the forefront of …
candidates for next‐generation non‐volatile memory and is currently at the forefront of …
Diffusion-assisted displacive transformation in Yttrium-doped Sb2Te3 phase change materials
Phase transformations between cubic and rhombohedral states of phase-change
chalcogenide materials have been considered to result in small resistance drift, fast …
chalcogenide materials have been considered to result in small resistance drift, fast …
Chemical understanding of resistance drift suppression in Ge–Sn–Te phase-change memory materials
The resistance drift phenomenon observed in amorphous chalcogenide phase-change
materials (PCMs) hinders the development of PCM-based neuro-inspired computing …
materials (PCMs) hinders the development of PCM-based neuro-inspired computing …
Optical excitation-induced ultrafast amorphization in the Y-Sb-Te alloy system: insights from real-time time-dependent DFT with molecular dynamics calculations
In general, shortening the laser pulse width can suppress thermal dissipation to allow for
sub-picosecond phase change during amorphization, yet there is no consistent evidence for …
sub-picosecond phase change during amorphization, yet there is no consistent evidence for …
Role of microscopic coherent force and hot-carrier cooling in photoinduced phase transition for chalcogenide phase-change materials
L Chen, L Chen, H Chen, Y Li, L Shang, L Zhu, J Zhang… - Physical Review B, 2024 - APS
The nonequilibrium ultrafast carrier dynamics of the photoinduced phase transition in
chalcogenide phase-change material (rocksalt Ge-Sb-Te) has been investigated via real …
chalcogenide phase-change material (rocksalt Ge-Sb-Te) has been investigated via real …