In this study, we enlighten about the field effect transistors (FET) and their technologies. As
far as very large integration is concerned, researchers are continuously focusing on scaling …

It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …

The performance of MoS 2 transistors is strongly affected by charge trap** in oxide traps
with very broad distributions of time constants. These defects degrade the mobility and …

A paradigm for MOSFET instabilities is outlined based on gate oxide traps and the detailed
understanding of their properties. A model with trap energy levels in the gate dielectric and …

Near-threshold computing (NTC) poses stringent constraints on designing reliable circuits,
as degradations have a magnified impact at lower supply voltages (Vdd) compared with …

Leakage currents through dielectrics in modern logic, memory, and power devices, and back-
end interlevel layers can severely increase the time-zero power dissipation and shorten the …

Charge trap** at oxide defects poses a serious reliability concern in MOS transistors. For
scaled technology nodes, the impact of charge-trap** events on the device behavior …

The introduction of FinFET technology as an effective solution to continue technology
scaling has pushed self-heating effects to the forefront of reliability challenges, especially at …

Abstract As-fabricated (time-zero) variability and mean device aging are nowadays routinely
considered in circuit simulations and design. Time-dependent variability (reliability-related …

Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically
beneficial for their operating characteristics, such as switching speed and power …