Gallium nitride nanostructures: Synthesis, characterization and applications
T Kente, SD Mhlanga - Journal of Crystal Growth, 2016 - Elsevier
GaN nanostructures have been extensively studied due to their important properties and
applications in many fields. The recent synthesis and uses of these nanostructures have …
applications in many fields. The recent synthesis and uses of these nanostructures have …
Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability
K Lekhal, G Avit, Y André, A Trassoudaine, E Gil… - …, 2012 - iopscience.iop.org
The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when
growing GaN semiconductor nanowires (NWs). With respect to the classical well-known …
growing GaN semiconductor nanowires (NWs). With respect to the classical well-known …
Hydride vapor phase epitaxy for current III–V and nitride semiconductor compound issues
E Gil, Y André, R Cadoret, A Trassoudaine - Handbook of Crystal Growth, 2015 - Elsevier
Hydride vapor phase epitaxy (HVPE) was part of the very first vapor phase epitaxy
processes developed for the growth of III–V semiconductor layers. HVPE's features—the …
processes developed for the growth of III–V semiconductor layers. HVPE's features—the …
Self-assembled growth of inclined GaN nanorods on (10− 10) m-plane sapphire using metal–organic chemical vapor deposition
We report the self-assembled growth of inclined and highly ordered GaN nanorods on (10−
10) m-plane sapphire by metal–organic chemical vapor deposition, without metal catalyst …
10) m-plane sapphire by metal–organic chemical vapor deposition, without metal catalyst …
Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy
GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge
luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si …
luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si …
Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy
In this paper, we discuss the influence of parameters such as type of carrier gas and NH
3/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth …
3/HCl flow ratio on the growth of vertical GaN microstructures by selective-area growth …
Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE
The selective area growth (SAG) of GaN was implemented on patterned GaN/sapphire
templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar …
templates by hydride vapor phase epitaxy (HVPE) to fabricate regular arrays of Ga-polar …
Roles of atomic nitrogen/hydrogen in GaN film growth by chemically assisted sputtering with dual plasma sources
A Tanide, S Nakamura, A Horikoshi, S Takatsuji… - ACS …, 2020 - ACS Publications
The growth of sputtered GaN at low temperature is strongly desired to realize the
dissemination of low-cost GaN high electron mobility transistor devices for next-generation …
dissemination of low-cost GaN high electron mobility transistor devices for next-generation …
Simple route to fabricate nanowire-assembled 3D AlGaN nanourchins by chemical vapour deposition
F Chen, T Wang, W Su - Ceramics International, 2018 - Elsevier
Large-scale nanowire-assembled three-dimensional (3D) AlGaN nanourchins are
synthesized under various growth conditions via a facile chemical vapour deposition (CVD) …
synthesized under various growth conditions via a facile chemical vapour deposition (CVD) …
Behavior of GaN nanoneedles grown by using hydride vapor phase epitaxy for different growth times
MJ Shin, DO Gwon, HS Ahn, SN Yi, IJ Jeon… - Journal of the Korean …, 2015 - Springer
Gallium nitride (GaN) nanoneedles were synthesized by using the hydride vapor phase
epitaxy method at various growth temperatures and times under a HCl: NH 3 flow ratio of 1 …
epitaxy method at various growth temperatures and times under a HCl: NH 3 flow ratio of 1 …