Interplay of voltage control of magnetic anisotropy, spin-transfer torque, and heat in the spin-orbit-torque switching of three-terminal magnetic tunnel junctions

V Krizakova, E Grimaldi, K Garello, G Sala, S Couet… - Physical Review …, 2021‏ - APS
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by
spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the …

Current-driven spin oscillations in noncollinear antiferromagnetic tunnel junctions

S Hu, C Zheng, C Chen, Y Zhou, Y Liu - Physical Review B, 2024‏ - APS
This study investigates the fascinating reality of noncollinear antiferromagnet Mn 3 Pt thin
film and its potential applications in spintronic devices, particularly in the context of all …

Spin-transfer and spin-orbit torques in the Landau–Lifshitz–Gilbert equation

A Meo, CE Cronshaw, S Jenkins, A Lees… - Journal of Physics …, 2022‏ - iopscience.iop.org
Dynamic simulations of spin-transfer and spin-orbit torques are increasingly important for a
wide range of spintronic devices including magnetic random access memory, spin-torque …

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

A Meo, J Chureemart, RW Chantrell, P Chureemart - Scientific reports, 2022‏ - nature.com
We present a theoretical investigation of the magnetisation reversal process in CoFeB-
based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of …

Temperature dependence of spin transport behavior in Heusler alloy CPP-GMR

N Saenphum, R Khamtawi, J Chureemart… - Scientific reports, 2024‏ - nature.com
In this study, we investigate the effect of temperature on the performance of a read sensor by
utilizing an atomistic model coupled with a spin transport model. Specifically, we study the …

Magnetization dynamics at finite temperature in CoFeB–MgO based MTJs

S Sampan-A-Pai, R Phoomatna, W Boonruesi, A Meo… - Scientific reports, 2023‏ - nature.com
The discovery of magnetization switching via spin transfer torque (STT) in PMA-based MTJs
has led to the development of next-generation magnetic memory technology with high …

Magneto-ionic Control of Ferrimagnetic Order by Oxygen Gating

X Feng, Z Zheng, Y Zhang, Z Zhang, Y Shao, Y He… - Nano …, 2023‏ - ACS Publications
Ferrimagnets are considered an excellent spintronic material candidate which combines
ultrafast magnetic dynamics and straightforward electrical detectability. However, efficient …

Voltage-controlled magnetic anisotropy based physical unclonable function

A Meo, E Garzón, R De Rose, G Finocchio… - Applied Physics …, 2023‏ - pubs.aip.org
We design a spintronic physical unclonable function (PUF) based on sub-100 nm voltage-
controlled magnetic anisotropy hybrid magnetic tunnel junctions (VCMA-MTJs). This …

Spin-transfer-torque induced spatially nonuniform switching in ferrimagnets

X Zhang, Z Xu, J Ren, Y Qiao, W Fan, Z Zhu - Applied Physics Letters, 2024‏ - pubs.aip.org
Ferrimagnet (FiM),(FeCo) 1− x Gd x, attracts research attention due to its ultrafast magnetic
dynamics and finite net magnetization. Incorporating FiM into the magnetic tunnel junction …

Gate-controllable two-dimensional transition metal dichalcogenides for spintronic memory

SH Cheng, TI Kuo, EF Hsieh, WJ Hsueh - Journal of Alloys and Compounds, 2025‏ - Elsevier
Rapid technological advancement has increased the demand for high-speed, low-power
devices, particularly applied in artificial intelligence (AI) and the Internet of Things (IoT) …